Regulating strain in perovskite thin films through charge-transport layers

Remnant tensile strain in the perovskite films induced in the thermal annealing step is a known source of material and device instabilities. Here Xue et al. use a thermal expandable hole transporting layer to compensate the strain and result in most stable wide-bandgap perovskite solar cells so far.

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Autores principales:	Ding-Jiang Xue, Yi Hou, Shun-Chang Liu, Mingyang Wei, Bin Chen, Ziru Huang, Zongbao Li, Bin Sun, Andrew H. Proppe, Yitong Dong, Makhsud I. Saidaminov, Shana O. Kelley, Jin-Song Hu, Edward H. Sargent
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/50ece9c074ed4dbbadeadac74548d3ea
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spelling	oai:doaj.org-article:50ece9c074ed4dbbadeadac74548d3ea2021-12-02T15:39:29ZRegulating strain in perovskite thin films through charge-transport layers10.1038/s41467-020-15338-12041-1723https://doaj.org/article/50ece9c074ed4dbbadeadac74548d3ea2020-03-01T00:00:00Zhttps://doi.org/10.1038/s41467-020-15338-1https://doaj.org/toc/2041-1723Remnant tensile strain in the perovskite films induced in the thermal annealing step is a known source of material and device instabilities. Here Xue et al. use a thermal expandable hole transporting layer to compensate the strain and result in most stable wide-bandgap perovskite solar cells so far.Ding-Jiang XueYi HouShun-Chang LiuMingyang WeiBin ChenZiru HuangZongbao LiBin SunAndrew H. ProppeYitong DongMakhsud I. SaidaminovShana O. KelleyJin-Song HuEdward H. SargentNature PortfolioarticleScienceQENNature Communications, Vol 11, Iss 1, Pp 1-8 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Ding-Jiang Xue Yi Hou Shun-Chang Liu Mingyang Wei Bin Chen Ziru Huang Zongbao Li Bin Sun Andrew H. Proppe Yitong Dong Makhsud I. Saidaminov Shana O. Kelley Jin-Song Hu Edward H. Sargent Regulating strain in perovskite thin films through charge-transport layers
description	Remnant tensile strain in the perovskite films induced in the thermal annealing step is a known source of material and device instabilities. Here Xue et al. use a thermal expandable hole transporting layer to compensate the strain and result in most stable wide-bandgap perovskite solar cells so far.
format	article
author	Ding-Jiang Xue Yi Hou Shun-Chang Liu Mingyang Wei Bin Chen Ziru Huang Zongbao Li Bin Sun Andrew H. Proppe Yitong Dong Makhsud I. Saidaminov Shana O. Kelley Jin-Song Hu Edward H. Sargent
author_facet	Ding-Jiang Xue Yi Hou Shun-Chang Liu Mingyang Wei Bin Chen Ziru Huang Zongbao Li Bin Sun Andrew H. Proppe Yitong Dong Makhsud I. Saidaminov Shana O. Kelley Jin-Song Hu Edward H. Sargent
author_sort	Ding-Jiang Xue
title	Regulating strain in perovskite thin films through charge-transport layers
title_short	Regulating strain in perovskite thin films through charge-transport layers
title_full	Regulating strain in perovskite thin films through charge-transport layers
title_fullStr	Regulating strain in perovskite thin films through charge-transport layers
title_full_unstemmed	Regulating strain in perovskite thin films through charge-transport layers
title_sort	regulating strain in perovskite thin films through charge-transport layers
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/50ece9c074ed4dbbadeadac74548d3ea
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Regulating strain in perovskite thin films through charge-transport layers

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