Weak antilocalization in topological crystalline insulator SnTe films deposited using amorphous seeding on SrTiO3

Topological crystalline insulators (TCIs) promise spin-polarized or dissipationless transport, which can be controlled by crystal symmetry breaking through applied strain or electric field. To realize TCI devices with gate-controlled topological states, it is necessary to develop methods for deposit...

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Autores principales:	Stephen D. Albright, Ke Zou, Frederick J. Walker, Charles H. Ahn
Formato:	article
Lenguaje:	EN
Publicado:	AIP Publishing LLC 2021
Materias:	Biotechnology TP248.13-248.65 Physics QC1-999
Acceso en línea:	https://doaj.org/article/5143f597423a4c0c9afa0b0990081e7e
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spelling	oai:doaj.org-article:5143f597423a4c0c9afa0b0990081e7e2021-12-01T18:51:23ZWeak antilocalization in topological crystalline insulator SnTe films deposited using amorphous seeding on SrTiO32166-532X10.1063/5.0065627https://doaj.org/article/5143f597423a4c0c9afa0b0990081e7e2021-11-01T00:00:00Zhttp://dx.doi.org/10.1063/5.0065627https://doaj.org/toc/2166-532XTopological crystalline insulators (TCIs) promise spin-polarized or dissipationless transport, which can be controlled by crystal symmetry breaking through applied strain or electric field. To realize TCI devices with gate-controlled topological states, it is necessary to develop methods for depositing continuous and thin TCI films on substrates suitable for electric-field gating. Here, we present an optimized templating procedure for depositing single-orientation, continuous films of TCI SnTe on SrTiO3, which is an oxide with a wide bandgap and large dielectric constant suitable for gated devices. This process takes advantage of a thin SnTe template layer crystallized after amorphous deposition, with additional SnTe being grown by molecular beam epitaxy and monitored with in situ laser ellipsometry. Continuous, single-phase SnTe films with a (001) orientation relative to the SrTiO3 lattice are achieved. Magnetoconductivity measurements of SnTe films reveal a coexistence of weak antilocalization, consistent with topologically non-trivial states, and weak localization, consistent with trivial states from the bulk. This method of analysis may be suitable to analyze the magnetotransport characteristics of any topological material with carriers in both topological and trivial bulk states. The maximum phase coherence length is achieved for films thicker than 20 unit cells, which could be used for gated-SnTe devices.Stephen D. AlbrightKe ZouFrederick J. WalkerCharles H. AhnAIP Publishing LLCarticleBiotechnologyTP248.13-248.65PhysicsQC1-999ENAPL Materials, Vol 9, Iss 11, Pp 111106-111106-7 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Biotechnology TP248.13-248.65 Physics QC1-999
spellingShingle	Biotechnology TP248.13-248.65 Physics QC1-999 Stephen D. Albright Ke Zou Frederick J. Walker Charles H. Ahn Weak antilocalization in topological crystalline insulator SnTe films deposited using amorphous seeding on SrTiO3
description	Topological crystalline insulators (TCIs) promise spin-polarized or dissipationless transport, which can be controlled by crystal symmetry breaking through applied strain or electric field. To realize TCI devices with gate-controlled topological states, it is necessary to develop methods for depositing continuous and thin TCI films on substrates suitable for electric-field gating. Here, we present an optimized templating procedure for depositing single-orientation, continuous films of TCI SnTe on SrTiO3, which is an oxide with a wide bandgap and large dielectric constant suitable for gated devices. This process takes advantage of a thin SnTe template layer crystallized after amorphous deposition, with additional SnTe being grown by molecular beam epitaxy and monitored with in situ laser ellipsometry. Continuous, single-phase SnTe films with a (001) orientation relative to the SrTiO3 lattice are achieved. Magnetoconductivity measurements of SnTe films reveal a coexistence of weak antilocalization, consistent with topologically non-trivial states, and weak localization, consistent with trivial states from the bulk. This method of analysis may be suitable to analyze the magnetotransport characteristics of any topological material with carriers in both topological and trivial bulk states. The maximum phase coherence length is achieved for films thicker than 20 unit cells, which could be used for gated-SnTe devices.
format	article
author	Stephen D. Albright Ke Zou Frederick J. Walker Charles H. Ahn
author_facet	Stephen D. Albright Ke Zou Frederick J. Walker Charles H. Ahn
author_sort	Stephen D. Albright
title	Weak antilocalization in topological crystalline insulator SnTe films deposited using amorphous seeding on SrTiO3
title_short	Weak antilocalization in topological crystalline insulator SnTe films deposited using amorphous seeding on SrTiO3
title_full	Weak antilocalization in topological crystalline insulator SnTe films deposited using amorphous seeding on SrTiO3
title_fullStr	Weak antilocalization in topological crystalline insulator SnTe films deposited using amorphous seeding on SrTiO3
title_full_unstemmed	Weak antilocalization in topological crystalline insulator SnTe films deposited using amorphous seeding on SrTiO3
title_sort	weak antilocalization in topological crystalline insulator snte films deposited using amorphous seeding on srtio3
publisher	AIP Publishing LLC
publishDate	2021
url	https://doaj.org/article/5143f597423a4c0c9afa0b0990081e7e
work_keys_str_mv	AT stephendalbright weakantilocalizationintopologicalcrystallineinsulatorsntefilmsdepositedusingamorphousseedingonsrtio3 AT kezou weakantilocalizationintopologicalcrystallineinsulatorsntefilmsdepositedusingamorphousseedingonsrtio3 AT frederickjwalker weakantilocalizationintopologicalcrystallineinsulatorsntefilmsdepositedusingamorphousseedingonsrtio3 AT charleshahn weakantilocalizationintopologicalcrystallineinsulatorsntefilmsdepositedusingamorphousseedingonsrtio3
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Weak antilocalization in topological crystalline insulator SnTe films deposited using amorphous seeding on SrTiO3

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