Vertically Aligned <i>n</i>-Type Silicon Nanowire Array as a Free-Standing Anode for Lithium-Ion Batteries

Due to its high theoretical specific capacity, a silicon anode is one of the candidates for realizing high energy density lithium-ion batteries (LIBs). However, problems related to bulk silicon (e.g., low intrinsic conductivity and massive volume expansion) limit the performance of silicon anodes. I...

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Autores principales: Andika Pandu Nugroho, Naufal Hanif Hawari, Bagas Prakoso, Andam Deatama Refino, Nursidik Yulianto, Ferry Iskandar, Evvy Kartini, Erwin Peiner, Hutomo Suryo Wasisto, Afriyanti Sumboja
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Publicado: MDPI AG 2021
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spelling oai:doaj.org-article:5158561ab94c406ca02ea8db514892bb2021-11-25T18:32:44ZVertically Aligned <i>n</i>-Type Silicon Nanowire Array as a Free-Standing Anode for Lithium-Ion Batteries10.3390/nano111131372079-4991https://doaj.org/article/5158561ab94c406ca02ea8db514892bb2021-11-01T00:00:00Zhttps://www.mdpi.com/2079-4991/11/11/3137https://doaj.org/toc/2079-4991Due to its high theoretical specific capacity, a silicon anode is one of the candidates for realizing high energy density lithium-ion batteries (LIBs). However, problems related to bulk silicon (e.g., low intrinsic conductivity and massive volume expansion) limit the performance of silicon anodes. In this work, to improve the performance of silicon anodes, a vertically aligned <i>n</i>-type silicon nanowire array (<i>n</i>-SiNW) was fabricated using a well-controlled, top-down nano-machining technique by combining photolithography and inductively coupled plasma reactive ion etching (ICP-RIE) at a cryogenic temperature. The array of nanowires ~1 µm in diameter and with the aspect ratio of ~10 was successfully prepared from commercial <i>n</i>-type silicon wafer. The half-cell LIB with free-standing <i>n</i>-SiNW electrode exhibited an initial Coulombic efficiency of 91.1%, which was higher than the battery with a blank <i>n</i>-silicon wafer electrode (i.e., 67.5%). Upon 100 cycles of stability testing at 0.06 mA cm<sup>−2</sup>, the battery with the <i>n</i>-SiNW electrode retained 85.9% of its 0.50 mAh cm<sup>−2</sup> capacity after the pre-lithiation step, whereas its counterpart, the blank <i>n</i>-silicon wafer electrode, only maintained 61.4% of 0.21 mAh cm<sup>−2</sup> capacity. Furthermore, 76.7% capacity retention can be obtained at a current density of 0.2 mA cm<sup>−2</sup>, showing the potential of <i>n</i>-SiNW anodes for high current density applications. This work presents an alternative method for facile, high precision, and high throughput patterning on a wafer-scale to obtain a high aspect ratio <i>n</i>-SiNW, and its application in LIBs.Andika Pandu NugrohoNaufal Hanif HawariBagas PrakosoAndam Deatama RefinoNursidik YuliantoFerry IskandarEvvy KartiniErwin PeinerHutomo Suryo WasistoAfriyanti SumbojaMDPI AGarticlesilicon nanowirenanowire arraysilicon anode<i>n</i>-type silicon anodeLi-ion batteryChemistryQD1-999ENNanomaterials, Vol 11, Iss 3137, p 3137 (2021)
institution DOAJ
collection DOAJ
language EN
topic silicon nanowire
nanowire array
silicon anode
<i>n</i>-type silicon anode
Li-ion battery
Chemistry
QD1-999
spellingShingle silicon nanowire
nanowire array
silicon anode
<i>n</i>-type silicon anode
Li-ion battery
Chemistry
QD1-999
Andika Pandu Nugroho
Naufal Hanif Hawari
Bagas Prakoso
Andam Deatama Refino
Nursidik Yulianto
Ferry Iskandar
Evvy Kartini
Erwin Peiner
Hutomo Suryo Wasisto
Afriyanti Sumboja
Vertically Aligned <i>n</i>-Type Silicon Nanowire Array as a Free-Standing Anode for Lithium-Ion Batteries
description Due to its high theoretical specific capacity, a silicon anode is one of the candidates for realizing high energy density lithium-ion batteries (LIBs). However, problems related to bulk silicon (e.g., low intrinsic conductivity and massive volume expansion) limit the performance of silicon anodes. In this work, to improve the performance of silicon anodes, a vertically aligned <i>n</i>-type silicon nanowire array (<i>n</i>-SiNW) was fabricated using a well-controlled, top-down nano-machining technique by combining photolithography and inductively coupled plasma reactive ion etching (ICP-RIE) at a cryogenic temperature. The array of nanowires ~1 µm in diameter and with the aspect ratio of ~10 was successfully prepared from commercial <i>n</i>-type silicon wafer. The half-cell LIB with free-standing <i>n</i>-SiNW electrode exhibited an initial Coulombic efficiency of 91.1%, which was higher than the battery with a blank <i>n</i>-silicon wafer electrode (i.e., 67.5%). Upon 100 cycles of stability testing at 0.06 mA cm<sup>−2</sup>, the battery with the <i>n</i>-SiNW electrode retained 85.9% of its 0.50 mAh cm<sup>−2</sup> capacity after the pre-lithiation step, whereas its counterpart, the blank <i>n</i>-silicon wafer electrode, only maintained 61.4% of 0.21 mAh cm<sup>−2</sup> capacity. Furthermore, 76.7% capacity retention can be obtained at a current density of 0.2 mA cm<sup>−2</sup>, showing the potential of <i>n</i>-SiNW anodes for high current density applications. This work presents an alternative method for facile, high precision, and high throughput patterning on a wafer-scale to obtain a high aspect ratio <i>n</i>-SiNW, and its application in LIBs.
format article
author Andika Pandu Nugroho
Naufal Hanif Hawari
Bagas Prakoso
Andam Deatama Refino
Nursidik Yulianto
Ferry Iskandar
Evvy Kartini
Erwin Peiner
Hutomo Suryo Wasisto
Afriyanti Sumboja
author_facet Andika Pandu Nugroho
Naufal Hanif Hawari
Bagas Prakoso
Andam Deatama Refino
Nursidik Yulianto
Ferry Iskandar
Evvy Kartini
Erwin Peiner
Hutomo Suryo Wasisto
Afriyanti Sumboja
author_sort Andika Pandu Nugroho
title Vertically Aligned <i>n</i>-Type Silicon Nanowire Array as a Free-Standing Anode for Lithium-Ion Batteries
title_short Vertically Aligned <i>n</i>-Type Silicon Nanowire Array as a Free-Standing Anode for Lithium-Ion Batteries
title_full Vertically Aligned <i>n</i>-Type Silicon Nanowire Array as a Free-Standing Anode for Lithium-Ion Batteries
title_fullStr Vertically Aligned <i>n</i>-Type Silicon Nanowire Array as a Free-Standing Anode for Lithium-Ion Batteries
title_full_unstemmed Vertically Aligned <i>n</i>-Type Silicon Nanowire Array as a Free-Standing Anode for Lithium-Ion Batteries
title_sort vertically aligned <i>n</i>-type silicon nanowire array as a free-standing anode for lithium-ion batteries
publisher MDPI AG
publishDate 2021
url https://doaj.org/article/5158561ab94c406ca02ea8db514892bb
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