Thermal expansion coefficient of few-layer MoS2 studied by temperature-dependent Raman spectroscopy

Abstract The thermal expansion coefficient is an important thermal parameter that influences the performance of nanodevices based on two-dimensional materials. To obtain the thermal expansion coefficient of few-layer MoS2, suspended MoS2 and supported MoS2 were systematically investigated using Rama...

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Autores principales:	Zhongtao Lin, Wuguo Liu, Shibing Tian, Ke Zhu, Yuan Huang, Yang Yang
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/51602a48f1b6495ab84e5e779cd750a2
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spelling	oai:doaj.org-article:51602a48f1b6495ab84e5e779cd750a22021-12-02T18:18:06ZThermal expansion coefficient of few-layer MoS2 studied by temperature-dependent Raman spectroscopy10.1038/s41598-021-86479-62045-2322https://doaj.org/article/51602a48f1b6495ab84e5e779cd750a22021-03-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-86479-6https://doaj.org/toc/2045-2322Abstract The thermal expansion coefficient is an important thermal parameter that influences the performance of nanodevices based on two-dimensional materials. To obtain the thermal expansion coefficient of few-layer MoS2, suspended MoS2 and supported MoS2 were systematically investigated using Raman spectroscopy in the temperature range from 77 to 557 K. The temperature-dependent evolution of the Raman frequency shift for suspended MoS2 exhibited prominent differences from that for supported MoS2, obviously demonstrating the effect due to the thermal expansion coefficient mismatch between MoS2 and the substrate. The intrinsic thermal expansion coefficients of MoS2 with different numbers of layers were calculated. Interestingly, negative thermal expansion coefficients were obtained below 175 K, which was attributed to the bending vibrations in the MoS2 layer during cooling. Our results demonstrate that Raman spectroscopy is a feasible tool for investigating the thermal properties of few-layer MoS2 and will provide useful information for its further application in photoelectronic devices.Zhongtao LinWuguo LiuShibing TianKe ZhuYuan HuangYang YangNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Zhongtao Lin Wuguo Liu Shibing Tian Ke Zhu Yuan Huang Yang Yang Thermal expansion coefficient of few-layer MoS2 studied by temperature-dependent Raman spectroscopy
description	Abstract The thermal expansion coefficient is an important thermal parameter that influences the performance of nanodevices based on two-dimensional materials. To obtain the thermal expansion coefficient of few-layer MoS2, suspended MoS2 and supported MoS2 were systematically investigated using Raman spectroscopy in the temperature range from 77 to 557 K. The temperature-dependent evolution of the Raman frequency shift for suspended MoS2 exhibited prominent differences from that for supported MoS2, obviously demonstrating the effect due to the thermal expansion coefficient mismatch between MoS2 and the substrate. The intrinsic thermal expansion coefficients of MoS2 with different numbers of layers were calculated. Interestingly, negative thermal expansion coefficients were obtained below 175 K, which was attributed to the bending vibrations in the MoS2 layer during cooling. Our results demonstrate that Raman spectroscopy is a feasible tool for investigating the thermal properties of few-layer MoS2 and will provide useful information for its further application in photoelectronic devices.
format	article
author	Zhongtao Lin Wuguo Liu Shibing Tian Ke Zhu Yuan Huang Yang Yang
author_facet	Zhongtao Lin Wuguo Liu Shibing Tian Ke Zhu Yuan Huang Yang Yang
author_sort	Zhongtao Lin
title	Thermal expansion coefficient of few-layer MoS2 studied by temperature-dependent Raman spectroscopy
title_short	Thermal expansion coefficient of few-layer MoS2 studied by temperature-dependent Raman spectroscopy
title_full	Thermal expansion coefficient of few-layer MoS2 studied by temperature-dependent Raman spectroscopy
title_fullStr	Thermal expansion coefficient of few-layer MoS2 studied by temperature-dependent Raman spectroscopy
title_full_unstemmed	Thermal expansion coefficient of few-layer MoS2 studied by temperature-dependent Raman spectroscopy
title_sort	thermal expansion coefficient of few-layer mos2 studied by temperature-dependent raman spectroscopy
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/51602a48f1b6495ab84e5e779cd750a2
work_keys_str_mv	AT zhongtaolin thermalexpansioncoefficientoffewlayermos2studiedbytemperaturedependentramanspectroscopy AT wuguoliu thermalexpansioncoefficientoffewlayermos2studiedbytemperaturedependentramanspectroscopy AT shibingtian thermalexpansioncoefficientoffewlayermos2studiedbytemperaturedependentramanspectroscopy AT kezhu thermalexpansioncoefficientoffewlayermos2studiedbytemperaturedependentramanspectroscopy AT yuanhuang thermalexpansioncoefficientoffewlayermos2studiedbytemperaturedependentramanspectroscopy AT yangyang thermalexpansioncoefficientoffewlayermos2studiedbytemperaturedependentramanspectroscopy
_version_	1718378273144045568

Thermal expansion coefficient of few-layer MoS2 studied by temperature-dependent Raman spectroscopy

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