Self-driven WSe2 photodetectors enabled with asymmetrical van der Waals contact interfaces

Abstract Self-driven photodetectors that can detect light without any external voltage bias are important for low-power applications, including future internet of things, wearable electronics, and flexible electronics. While two-dimensional (2D) materials exhibit good optoelectronic properties, the...

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Autores principales:	Changjian Zhou, Shouyong Zhang, Zhe Lv, Zichao Ma, Cui Yu, Zhihong Feng, Mansun Chan
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/51a0136e294b4400b201a2233488622e
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spelling	oai:doaj.org-article:51a0136e294b4400b201a2233488622e2021-12-02T14:17:31ZSelf-driven WSe2 photodetectors enabled with asymmetrical van der Waals contact interfaces10.1038/s41699-020-00179-92397-7132https://doaj.org/article/51a0136e294b4400b201a2233488622e2020-12-01T00:00:00Zhttps://doi.org/10.1038/s41699-020-00179-9https://doaj.org/toc/2397-7132Abstract Self-driven photodetectors that can detect light without any external voltage bias are important for low-power applications, including future internet of things, wearable electronics, and flexible electronics. While two-dimensional (2D) materials exhibit good optoelectronic properties, the extraordinary properties have not been fully exploited to realize high-performance self-driven photodetectors. In this paper, a metal–semiconductor–metal (MSM) photodetector with graphene and Au as the two contacts have been proposed to realize the self-driven photodetector. Van der Waals contacts are formed by dry-transfer methods, which is important in constructing the asymmetrical MSM photodetector to avoid the Fermi-level pinning effect. By choosing graphene and Au as the two contact electrodes, a pronounced photovoltaic effect is obtained. Without any external bias, the self-driven photodetector exhibits a high responsivity of 7.55 A W−1 and an ultrahigh photocurrent-to-dark current ratio of ~108. The photodetector also shows gate-tunable characteristics due to the field-induced Fermi-level shift in the constituent 2D materials. What is more, the high linearity of the photodetector over almost 60 dB suggests the easy integration with processing circuits for practical applications.Changjian ZhouShouyong ZhangZhe LvZichao MaCui YuZhihong FengMansun ChanNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ChemistryQD1-999ENnpj 2D Materials and Applications, Vol 4, Iss 1, Pp 1-9 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999 Changjian Zhou Shouyong Zhang Zhe Lv Zichao Ma Cui Yu Zhihong Feng Mansun Chan Self-driven WSe2 photodetectors enabled with asymmetrical van der Waals contact interfaces
description	Abstract Self-driven photodetectors that can detect light without any external voltage bias are important for low-power applications, including future internet of things, wearable electronics, and flexible electronics. While two-dimensional (2D) materials exhibit good optoelectronic properties, the extraordinary properties have not been fully exploited to realize high-performance self-driven photodetectors. In this paper, a metal–semiconductor–metal (MSM) photodetector with graphene and Au as the two contacts have been proposed to realize the self-driven photodetector. Van der Waals contacts are formed by dry-transfer methods, which is important in constructing the asymmetrical MSM photodetector to avoid the Fermi-level pinning effect. By choosing graphene and Au as the two contact electrodes, a pronounced photovoltaic effect is obtained. Without any external bias, the self-driven photodetector exhibits a high responsivity of 7.55 A W−1 and an ultrahigh photocurrent-to-dark current ratio of ~108. The photodetector also shows gate-tunable characteristics due to the field-induced Fermi-level shift in the constituent 2D materials. What is more, the high linearity of the photodetector over almost 60 dB suggests the easy integration with processing circuits for practical applications.
format	article
author	Changjian Zhou Shouyong Zhang Zhe Lv Zichao Ma Cui Yu Zhihong Feng Mansun Chan
author_facet	Changjian Zhou Shouyong Zhang Zhe Lv Zichao Ma Cui Yu Zhihong Feng Mansun Chan
author_sort	Changjian Zhou
title	Self-driven WSe2 photodetectors enabled with asymmetrical van der Waals contact interfaces
title_short	Self-driven WSe2 photodetectors enabled with asymmetrical van der Waals contact interfaces
title_full	Self-driven WSe2 photodetectors enabled with asymmetrical van der Waals contact interfaces
title_fullStr	Self-driven WSe2 photodetectors enabled with asymmetrical van der Waals contact interfaces
title_full_unstemmed	Self-driven WSe2 photodetectors enabled with asymmetrical van der Waals contact interfaces
title_sort	self-driven wse2 photodetectors enabled with asymmetrical van der waals contact interfaces
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/51a0136e294b4400b201a2233488622e
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Self-driven WSe2 photodetectors enabled with asymmetrical van der Waals contact interfaces

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