The dualism between adatom- and vacancy-based single crystal growth models
In homoepitaxial crystal growth, four established modes describe atom deposition on a single crystal surface. Here the authors present a model that shows that, for each adatom growth mode, there exists an analogous but inverse version for vacancy growth. This also applies to combined growth.
Guardado en:
Autores principales: | , , |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2019
|
Materias: | |
Acceso en línea: | https://doaj.org/article/51b77bda677c4fae81c5ff74231554e2 |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Sumario: | In homoepitaxial crystal growth, four established modes describe atom deposition on a single crystal surface. Here the authors present a model that shows that, for each adatom growth mode, there exists an analogous but inverse version for vacancy growth. This also applies to combined growth. |
---|