The dualism between adatom- and vacancy-based single crystal growth models
In homoepitaxial crystal growth, four established modes describe atom deposition on a single crystal surface. Here the authors present a model that shows that, for each adatom growth mode, there exists an analogous but inverse version for vacancy growth. This also applies to combined growth.
Guardado en:
Autores principales: | Marcel J. Rost, Leon Jacobse, Marc T. M. Koper |
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Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2019
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Materias: | |
Acceso en línea: | https://doaj.org/article/51b77bda677c4fae81c5ff74231554e2 |
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