Epitaxial lift-off of freestanding (011) and (111) SrRuO3 thin films using a water sacrificial layer
Abstract Two-dimensional freestanding thin films of single crystalline oxide perovskites are expected to have great potential in integration of new features to the current Si-based technology. Here, we showed the ability to create freestanding single crystalline (011)- and (111)-oriented SrRuO3 thin...
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| Autores principales: | , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/52302c66105c45449732eb9c5cd736a6 |
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| Sumario: | Abstract Two-dimensional freestanding thin films of single crystalline oxide perovskites are expected to have great potential in integration of new features to the current Si-based technology. Here, we showed the ability to create freestanding single crystalline (011)- and (111)-oriented SrRuO3 thin films using Sr3Al2O6 water-sacrificial layer. The epitaxial Sr3Al2O6(011) and Sr3Al2O6(111) layers were realized on SrTiO3(011) and SrTiO3(111), respectively. Subsequently, SrRuO3 films were epitaxially grown on these sacrificial layers. The freestanding single crystalline SrRuO3(011)pc and SrRuO3(111)pc films were successfully transferred on Si substrates, demonstrating possibilities to transfer desirable oriented oxide perovskite films on Si and arbitrary substrates. |
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