Epitaxial lift-off of freestanding (011) and (111) SrRuO3 thin films using a water sacrificial layer

Abstract Two-dimensional freestanding thin films of single crystalline oxide perovskites are expected to have great potential in integration of new features to the current Si-based technology. Here, we showed the ability to create freestanding single crystalline (011)- and (111)-oriented SrRuO3 thin...

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Autores principales: Phu T. P. Le, Johan E. ten Elshof, Gertjan Koster
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Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/52302c66105c45449732eb9c5cd736a6
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spelling oai:doaj.org-article:52302c66105c45449732eb9c5cd736a62021-12-02T16:04:23ZEpitaxial lift-off of freestanding (011) and (111) SrRuO3 thin films using a water sacrificial layer10.1038/s41598-021-91848-22045-2322https://doaj.org/article/52302c66105c45449732eb9c5cd736a62021-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-91848-2https://doaj.org/toc/2045-2322Abstract Two-dimensional freestanding thin films of single crystalline oxide perovskites are expected to have great potential in integration of new features to the current Si-based technology. Here, we showed the ability to create freestanding single crystalline (011)- and (111)-oriented SrRuO3 thin films using Sr3Al2O6 water-sacrificial layer. The epitaxial Sr3Al2O6(011) and Sr3Al2O6(111) layers were realized on SrTiO3(011) and SrTiO3(111), respectively. Subsequently, SrRuO3 films were epitaxially grown on these sacrificial layers. The freestanding single crystalline SrRuO3(011)pc and SrRuO3(111)pc films were successfully transferred on Si substrates, demonstrating possibilities to transfer desirable oriented oxide perovskite films on Si and arbitrary substrates.Phu T. P. LeJohan E. ten ElshofGertjan KosterNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Phu T. P. Le
Johan E. ten Elshof
Gertjan Koster
Epitaxial lift-off of freestanding (011) and (111) SrRuO3 thin films using a water sacrificial layer
description Abstract Two-dimensional freestanding thin films of single crystalline oxide perovskites are expected to have great potential in integration of new features to the current Si-based technology. Here, we showed the ability to create freestanding single crystalline (011)- and (111)-oriented SrRuO3 thin films using Sr3Al2O6 water-sacrificial layer. The epitaxial Sr3Al2O6(011) and Sr3Al2O6(111) layers were realized on SrTiO3(011) and SrTiO3(111), respectively. Subsequently, SrRuO3 films were epitaxially grown on these sacrificial layers. The freestanding single crystalline SrRuO3(011)pc and SrRuO3(111)pc films were successfully transferred on Si substrates, demonstrating possibilities to transfer desirable oriented oxide perovskite films on Si and arbitrary substrates.
format article
author Phu T. P. Le
Johan E. ten Elshof
Gertjan Koster
author_facet Phu T. P. Le
Johan E. ten Elshof
Gertjan Koster
author_sort Phu T. P. Le
title Epitaxial lift-off of freestanding (011) and (111) SrRuO3 thin films using a water sacrificial layer
title_short Epitaxial lift-off of freestanding (011) and (111) SrRuO3 thin films using a water sacrificial layer
title_full Epitaxial lift-off of freestanding (011) and (111) SrRuO3 thin films using a water sacrificial layer
title_fullStr Epitaxial lift-off of freestanding (011) and (111) SrRuO3 thin films using a water sacrificial layer
title_full_unstemmed Epitaxial lift-off of freestanding (011) and (111) SrRuO3 thin films using a water sacrificial layer
title_sort epitaxial lift-off of freestanding (011) and (111) srruo3 thin films using a water sacrificial layer
publisher Nature Portfolio
publishDate 2021
url https://doaj.org/article/52302c66105c45449732eb9c5cd736a6
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AT johanetenelshof epitaxialliftoffoffreestanding011and111srruo3thinfilmsusingawatersacrificiallayer
AT gertjankoster epitaxialliftoffoffreestanding011and111srruo3thinfilmsusingawatersacrificiallayer
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