Epitaxial lift-off of freestanding (011) and (111) SrRuO3 thin films using a water sacrificial layer
Abstract Two-dimensional freestanding thin films of single crystalline oxide perovskites are expected to have great potential in integration of new features to the current Si-based technology. Here, we showed the ability to create freestanding single crystalline (011)- and (111)-oriented SrRuO3 thin...
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Nature Portfolio
2021
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oai:doaj.org-article:52302c66105c45449732eb9c5cd736a62021-12-02T16:04:23ZEpitaxial lift-off of freestanding (011) and (111) SrRuO3 thin films using a water sacrificial layer10.1038/s41598-021-91848-22045-2322https://doaj.org/article/52302c66105c45449732eb9c5cd736a62021-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-91848-2https://doaj.org/toc/2045-2322Abstract Two-dimensional freestanding thin films of single crystalline oxide perovskites are expected to have great potential in integration of new features to the current Si-based technology. Here, we showed the ability to create freestanding single crystalline (011)- and (111)-oriented SrRuO3 thin films using Sr3Al2O6 water-sacrificial layer. The epitaxial Sr3Al2O6(011) and Sr3Al2O6(111) layers were realized on SrTiO3(011) and SrTiO3(111), respectively. Subsequently, SrRuO3 films were epitaxially grown on these sacrificial layers. The freestanding single crystalline SrRuO3(011)pc and SrRuO3(111)pc films were successfully transferred on Si substrates, demonstrating possibilities to transfer desirable oriented oxide perovskite films on Si and arbitrary substrates.Phu T. P. LeJohan E. ten ElshofGertjan KosterNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-8 (2021) |
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Medicine R Science Q Phu T. P. Le Johan E. ten Elshof Gertjan Koster Epitaxial lift-off of freestanding (011) and (111) SrRuO3 thin films using a water sacrificial layer |
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Abstract Two-dimensional freestanding thin films of single crystalline oxide perovskites are expected to have great potential in integration of new features to the current Si-based technology. Here, we showed the ability to create freestanding single crystalline (011)- and (111)-oriented SrRuO3 thin films using Sr3Al2O6 water-sacrificial layer. The epitaxial Sr3Al2O6(011) and Sr3Al2O6(111) layers were realized on SrTiO3(011) and SrTiO3(111), respectively. Subsequently, SrRuO3 films were epitaxially grown on these sacrificial layers. The freestanding single crystalline SrRuO3(011)pc and SrRuO3(111)pc films were successfully transferred on Si substrates, demonstrating possibilities to transfer desirable oriented oxide perovskite films on Si and arbitrary substrates. |
format |
article |
author |
Phu T. P. Le Johan E. ten Elshof Gertjan Koster |
author_facet |
Phu T. P. Le Johan E. ten Elshof Gertjan Koster |
author_sort |
Phu T. P. Le |
title |
Epitaxial lift-off of freestanding (011) and (111) SrRuO3 thin films using a water sacrificial layer |
title_short |
Epitaxial lift-off of freestanding (011) and (111) SrRuO3 thin films using a water sacrificial layer |
title_full |
Epitaxial lift-off of freestanding (011) and (111) SrRuO3 thin films using a water sacrificial layer |
title_fullStr |
Epitaxial lift-off of freestanding (011) and (111) SrRuO3 thin films using a water sacrificial layer |
title_full_unstemmed |
Epitaxial lift-off of freestanding (011) and (111) SrRuO3 thin films using a water sacrificial layer |
title_sort |
epitaxial lift-off of freestanding (011) and (111) srruo3 thin films using a water sacrificial layer |
publisher |
Nature Portfolio |
publishDate |
2021 |
url |
https://doaj.org/article/52302c66105c45449732eb9c5cd736a6 |
work_keys_str_mv |
AT phutple epitaxialliftoffoffreestanding011and111srruo3thinfilmsusingawatersacrificiallayer AT johanetenelshof epitaxialliftoffoffreestanding011and111srruo3thinfilmsusingawatersacrificiallayer AT gertjankoster epitaxialliftoffoffreestanding011and111srruo3thinfilmsusingawatersacrificiallayer |
_version_ |
1718385205882912768 |