Ultra-long carrier lifetime in neutral graphene-hBN van der Waals heterostructures under mid-infrared illumination

Long carrier lifetimes are beneficial for graphene-based optoelectronics, but carrier recombination processes in graphene possess sub-picosecond characteristic times. Here, the authors report carrier lifetimes ~30 ps at low energy in graphene/hBN Zener-Klein transistors, attributed to interband Auge...

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Autores principales:	P. Huang, E. Riccardi, S. Messelot, H. Graef, F. Valmorra, J. Tignon, T. Taniguchi, K. Watanabe, S. Dhillon, B. Plaçais, R. Ferreira, J. Mangeney
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/5237567f74614181b25bebee4a7106aa
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spelling	oai:doaj.org-article:5237567f74614181b25bebee4a7106aa2021-12-02T17:31:23ZUltra-long carrier lifetime in neutral graphene-hBN van der Waals heterostructures under mid-infrared illumination10.1038/s41467-020-14714-12041-1723https://doaj.org/article/5237567f74614181b25bebee4a7106aa2020-02-01T00:00:00Zhttps://doi.org/10.1038/s41467-020-14714-1https://doaj.org/toc/2041-1723Long carrier lifetimes are beneficial for graphene-based optoelectronics, but carrier recombination processes in graphene possess sub-picosecond characteristic times. Here, the authors report carrier lifetimes ~30 ps at low energy in graphene/hBN Zener-Klein transistors, attributed to interband Auger processes.P. HuangE. RiccardiS. MesselotH. GraefF. ValmorraJ. TignonT. TaniguchiK. WatanabeS. DhillonB. PlaçaisR. FerreiraJ. MangeneyNature PortfolioarticleScienceQENNature Communications, Vol 11, Iss 1, Pp 1-9 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q P. Huang E. Riccardi S. Messelot H. Graef F. Valmorra J. Tignon T. Taniguchi K. Watanabe S. Dhillon B. Plaçais R. Ferreira J. Mangeney Ultra-long carrier lifetime in neutral graphene-hBN van der Waals heterostructures under mid-infrared illumination
description	Long carrier lifetimes are beneficial for graphene-based optoelectronics, but carrier recombination processes in graphene possess sub-picosecond characteristic times. Here, the authors report carrier lifetimes ~30 ps at low energy in graphene/hBN Zener-Klein transistors, attributed to interband Auger processes.
format	article
author	P. Huang E. Riccardi S. Messelot H. Graef F. Valmorra J. Tignon T. Taniguchi K. Watanabe S. Dhillon B. Plaçais R. Ferreira J. Mangeney
author_facet	P. Huang E. Riccardi S. Messelot H. Graef F. Valmorra J. Tignon T. Taniguchi K. Watanabe S. Dhillon B. Plaçais R. Ferreira J. Mangeney
author_sort	P. Huang
title	Ultra-long carrier lifetime in neutral graphene-hBN van der Waals heterostructures under mid-infrared illumination
title_short	Ultra-long carrier lifetime in neutral graphene-hBN van der Waals heterostructures under mid-infrared illumination
title_full	Ultra-long carrier lifetime in neutral graphene-hBN van der Waals heterostructures under mid-infrared illumination
title_fullStr	Ultra-long carrier lifetime in neutral graphene-hBN van der Waals heterostructures under mid-infrared illumination
title_full_unstemmed	Ultra-long carrier lifetime in neutral graphene-hBN van der Waals heterostructures under mid-infrared illumination
title_sort	ultra-long carrier lifetime in neutral graphene-hbn van der waals heterostructures under mid-infrared illumination
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/5237567f74614181b25bebee4a7106aa
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Ultra-long carrier lifetime in neutral graphene-hBN van der Waals heterostructures under mid-infrared illumination

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