Ultra-long carrier lifetime in neutral graphene-hBN van der Waals heterostructures under mid-infrared illumination

Ultra-long carrier lifetime in neutral graphene-hBN van der Waals heterostructures under mid-infrared illumination

Long carrier lifetimes are beneficial for graphene-based optoelectronics, but carrier recombination processes in graphene possess sub-picosecond characteristic times. Here, the authors report carrier lifetimes ~30 ps at low energy in graphene/hBN Zener-Klein transistors, attributed to interband Auge...

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Autores principales: P. Huang, E. Riccardi, S. Messelot, H. Graef, F. Valmorra, J. Tignon, T. Taniguchi, K. Watanabe, S. Dhillon, B. Plaçais, R. Ferreira, J. Mangeney
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2020
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Science
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Acceso en línea:https://doaj.org/article/5237567f74614181b25bebee4a7106aa
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