Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices

Abstract We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots. The motivation of this work is to determine an approach that allows to assess single quantum dots as candidates for quantum nanophotonic devices. By comb...

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Autores principales: Luca Sapienza, Jin Liu, Jin Dong Song, Stefan Fält, Werner Wegscheider, Antonio Badolato, Kartik Srinivasan
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Lenguaje:EN
Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/531889c180df47bbada47f1b1fa78cb1
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spelling oai:doaj.org-article:531889c180df47bbada47f1b1fa78cb12021-12-02T12:32:45ZCombined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices10.1038/s41598-017-06566-52045-2322https://doaj.org/article/531889c180df47bbada47f1b1fa78cb12017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-06566-5https://doaj.org/toc/2045-2322Abstract We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots. The motivation of this work is to determine an approach that allows to assess single quantum dots as candidates for quantum nanophotonic devices. By combining optical and scanning probe characterization techniques, we find that single quantum dots often appear in the vicinity of comparatively large topographic features. Despite this, the quantum dots generally do not exhibit significant differences in their non-resonantly pumped emission spectra in comparison to quantum dots appearing in defect-free regions, and this behavior is observed across multiple wafers produced in different growth chambers. Such large surface features are nevertheless a detriment to applications in which single quantum dots are embedded within nanofabricated photonic devices: they are likely to cause large spectral shifts in the wavelength of cavity modes designed to resonantly enhance the quantum dot emission, thereby resulting in a nominally perfectly-fabricated single quantum dot device failing to behave in accordance with design. We anticipate that the approach of screening quantum dots not only based on their optical properties, but also their surrounding surface topographies, will be necessary to improve the yield of single quantum dot nanophotonic devices.Luca SapienzaJin LiuJin Dong SongStefan FältWerner WegscheiderAntonio BadolatoKartik SrinivasanNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Luca Sapienza
Jin Liu
Jin Dong Song
Stefan Fält
Werner Wegscheider
Antonio Badolato
Kartik Srinivasan
Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices
description Abstract We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots. The motivation of this work is to determine an approach that allows to assess single quantum dots as candidates for quantum nanophotonic devices. By combining optical and scanning probe characterization techniques, we find that single quantum dots often appear in the vicinity of comparatively large topographic features. Despite this, the quantum dots generally do not exhibit significant differences in their non-resonantly pumped emission spectra in comparison to quantum dots appearing in defect-free regions, and this behavior is observed across multiple wafers produced in different growth chambers. Such large surface features are nevertheless a detriment to applications in which single quantum dots are embedded within nanofabricated photonic devices: they are likely to cause large spectral shifts in the wavelength of cavity modes designed to resonantly enhance the quantum dot emission, thereby resulting in a nominally perfectly-fabricated single quantum dot device failing to behave in accordance with design. We anticipate that the approach of screening quantum dots not only based on their optical properties, but also their surrounding surface topographies, will be necessary to improve the yield of single quantum dot nanophotonic devices.
format article
author Luca Sapienza
Jin Liu
Jin Dong Song
Stefan Fält
Werner Wegscheider
Antonio Badolato
Kartik Srinivasan
author_facet Luca Sapienza
Jin Liu
Jin Dong Song
Stefan Fält
Werner Wegscheider
Antonio Badolato
Kartik Srinivasan
author_sort Luca Sapienza
title Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices
title_short Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices
title_full Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices
title_fullStr Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices
title_full_unstemmed Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices
title_sort combined atomic force microscopy and photoluminescence imaging to select single inas/gaas quantum dots for quantum photonic devices
publisher Nature Portfolio
publishDate 2017
url https://doaj.org/article/531889c180df47bbada47f1b1fa78cb1
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