Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices
Abstract We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots. The motivation of this work is to determine an approach that allows to assess single quantum dots as candidates for quantum nanophotonic devices. By comb...
Guardado en:
Autores principales: | Luca Sapienza, Jin Liu, Jin Dong Song, Stefan Fält, Werner Wegscheider, Antonio Badolato, Kartik Srinivasan |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2017
|
Materias: | |
Acceso en línea: | https://doaj.org/article/531889c180df47bbada47f1b1fa78cb1 |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Low-noise GaAs quantum dots for quantum photonics
por: Liang Zhai, et al.
Publicado: (2020) -
Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots
por: Arka B. Dey, et al.
Publicado: (2018) -
Highly indistinguishable and strongly entangled photons from symmetric GaAs quantum dots
por: Daniel Huber, et al.
Publicado: (2017) -
Efficient two-step photocarrier generation in bias-controlled InAs/GaAs quantum dot superlattice intermediate-band solar cells
por: T. Kada, et al.
Publicado: (2017) -
Heterogeneous integration for on-chip quantum photonic circuits with single quantum dot devices
por: Marcelo Davanco, et al.
Publicado: (2017)