Effect of load sequence interaction on bond-wire lifetime due to power cycling
Abstract Experimental investigations on the effects of load sequence on degradations of bond-wire contacts of Insulated Gate Bipolar Transistors power modules are reported in this paper. Both the junction temperature swing ( $$\Delta T_{j}$$ Δ T j ) and the heating duration ( $$t_{ON}$$ t ON ) are i...
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| Autores principales: | , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/5321eb1bf0a3412dbb3da87d8718420b |
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| Sumario: | Abstract Experimental investigations on the effects of load sequence on degradations of bond-wire contacts of Insulated Gate Bipolar Transistors power modules are reported in this paper. Both the junction temperature swing ( $$\Delta T_{j}$$ Δ T j ) and the heating duration ( $$t_{ON}$$ t ON ) are investigated. First, power cycling tests with single conditions (in $$\Delta T_{j}$$ Δ T j and $$t_{ON}$$ t ON ), are performed in order to serve as test references. Then, combined power cycling tests with two-level stress conditions have been done sequentially. These tests are carried-out in the two sequences: low stress/high stress (LH) and high stress/low stress (HL) for both $$\Delta T_{j}$$ Δ T j and $$t_{ON}$$ t ON . The tests conducted show that a sequencing in $$\Delta T_{j}$$ Δ T j regardless of the direction “high-low” or “low–high” leads to an acceleration of degradations and so, to shorter lifetimes. This is more pronounced when the difference between the stress levels is large. With regard to the heating duration ( $$t_{ON}$$ t ON ), the effect seems insignificant. However, it is necessary to confirm the effect of this last parameter by additional tests. |
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