Contact spacing controls the on-current for all-carbon field effect transistors

The need for reduced dimensions of future devices pushes the limits of essential Si-based components and so alternative materials, such as carbon nanotubes or graphene, are being investigated as alternatives, but with new materials come new challenges. Here, the authors experimentally and theoretica...

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Autores principales:	Ali Deniz Özdemir, Pramit Barua, Felix Pyatkov, Frank Hennrich, Yuan Chen, Wolfgang Wenzel, Ralph Krupke, Artem Fediai
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Astrophysics QB460-466 Physics QC1-999
Acceso en línea:	https://doaj.org/article/53323d1f66e14ba4b583453067e561d9
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spelling	oai:doaj.org-article:53323d1f66e14ba4b583453067e561d92021-11-21T12:27:26ZContact spacing controls the on-current for all-carbon field effect transistors10.1038/s42005-021-00747-52399-3650https://doaj.org/article/53323d1f66e14ba4b583453067e561d92021-11-01T00:00:00Zhttps://doi.org/10.1038/s42005-021-00747-5https://doaj.org/toc/2399-3650The need for reduced dimensions of future devices pushes the limits of essential Si-based components and so alternative materials, such as carbon nanotubes or graphene, are being investigated as alternatives, but with new materials come new challenges. Here, the authors experimentally and theoretically investigate the on-currents for all-carbon transistors finding that contact spacing and length plays an important role in device performance.Ali Deniz ÖzdemirPramit BaruaFelix PyatkovFrank HennrichYuan ChenWolfgang WenzelRalph KrupkeArtem FediaiNature PortfolioarticleAstrophysicsQB460-466PhysicsQC1-999ENCommunications Physics, Vol 4, Iss 1, Pp 1-12 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Astrophysics QB460-466 Physics QC1-999
spellingShingle	Astrophysics QB460-466 Physics QC1-999 Ali Deniz Özdemir Pramit Barua Felix Pyatkov Frank Hennrich Yuan Chen Wolfgang Wenzel Ralph Krupke Artem Fediai Contact spacing controls the on-current for all-carbon field effect transistors
description	The need for reduced dimensions of future devices pushes the limits of essential Si-based components and so alternative materials, such as carbon nanotubes or graphene, are being investigated as alternatives, but with new materials come new challenges. Here, the authors experimentally and theoretically investigate the on-currents for all-carbon transistors finding that contact spacing and length plays an important role in device performance.
format	article
author	Ali Deniz Özdemir Pramit Barua Felix Pyatkov Frank Hennrich Yuan Chen Wolfgang Wenzel Ralph Krupke Artem Fediai
author_facet	Ali Deniz Özdemir Pramit Barua Felix Pyatkov Frank Hennrich Yuan Chen Wolfgang Wenzel Ralph Krupke Artem Fediai
author_sort	Ali Deniz Özdemir
title	Contact spacing controls the on-current for all-carbon field effect transistors
title_short	Contact spacing controls the on-current for all-carbon field effect transistors
title_full	Contact spacing controls the on-current for all-carbon field effect transistors
title_fullStr	Contact spacing controls the on-current for all-carbon field effect transistors
title_full_unstemmed	Contact spacing controls the on-current for all-carbon field effect transistors
title_sort	contact spacing controls the on-current for all-carbon field effect transistors
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/53323d1f66e14ba4b583453067e561d9
work_keys_str_mv	AT alidenizozdemir contactspacingcontrolstheoncurrentforallcarbonfieldeffecttransistors AT pramitbarua contactspacingcontrolstheoncurrentforallcarbonfieldeffecttransistors AT felixpyatkov contactspacingcontrolstheoncurrentforallcarbonfieldeffecttransistors AT frankhennrich contactspacingcontrolstheoncurrentforallcarbonfieldeffecttransistors AT yuanchen contactspacingcontrolstheoncurrentforallcarbonfieldeffecttransistors AT wolfgangwenzel contactspacingcontrolstheoncurrentforallcarbonfieldeffecttransistors AT ralphkrupke contactspacingcontrolstheoncurrentforallcarbonfieldeffecttransistors AT artemfediai contactspacingcontrolstheoncurrentforallcarbonfieldeffecttransistors
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Contact spacing controls the on-current for all-carbon field effect transistors

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