Domain wall motion in Pb(Zr0.20Ti0.80)O3 epitaxial thin films

Abstract Two Pb(Zr0.20Ti0.80)O3 samples of different thickness and domain configuration have been studied. The c-domain sample was found to have a higher coercive field E c and higher dielectric losses than the other which presents approximately 60% of c-domains and 40% of a-domains as observed by p...

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Autores principales:	C. Borderon, A. E. Brunier, K. Nadaud, R. Renoud, M. Alexe, H. W. Gundel
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/53b08474c139481ea4c67cc861b758df
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spelling	oai:doaj.org-article:53b08474c139481ea4c67cc861b758df2021-12-02T11:52:39ZDomain wall motion in Pb(Zr0.20Ti0.80)O3 epitaxial thin films10.1038/s41598-017-03757-y2045-2322https://doaj.org/article/53b08474c139481ea4c67cc861b758df2017-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-03757-yhttps://doaj.org/toc/2045-2322Abstract Two Pb(Zr0.20Ti0.80)O3 samples of different thickness and domain configuration have been studied. The c-domain sample was found to have a higher coercive field E c and higher dielectric losses than the other which presents approximately 60% of c-domains and 40% of a-domains as observed by piezo force microscopy (PFM) characterization. Hyperbolic law measurements reveal that the higher coercive field is due to domain wall pinning in deeper defects and hence a higher field E th is required for unpinning. The dissipation factors due to domain wall motion, however, are similar in both samples since the domain wall density is low and there is almost no interaction between domain walls. The higher dielectric losses in the c-domain oriented sample are a result of a greater contribution from the lattice and seem to be due to strain from the substrate, which is not relieved in a thin sample. PFM and dielectric characterization are complementary methods which provide a better understanding of the domain wall motion.C. BorderonA. E. BrunierK. NadaudR. RenoudM. AlexeH. W. GundelNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-7 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q C. Borderon A. E. Brunier K. Nadaud R. Renoud M. Alexe H. W. Gundel Domain wall motion in Pb(Zr0.20Ti0.80)O3 epitaxial thin films
description	Abstract Two Pb(Zr0.20Ti0.80)O3 samples of different thickness and domain configuration have been studied. The c-domain sample was found to have a higher coercive field E c and higher dielectric losses than the other which presents approximately 60% of c-domains and 40% of a-domains as observed by piezo force microscopy (PFM) characterization. Hyperbolic law measurements reveal that the higher coercive field is due to domain wall pinning in deeper defects and hence a higher field E th is required for unpinning. The dissipation factors due to domain wall motion, however, are similar in both samples since the domain wall density is low and there is almost no interaction between domain walls. The higher dielectric losses in the c-domain oriented sample are a result of a greater contribution from the lattice and seem to be due to strain from the substrate, which is not relieved in a thin sample. PFM and dielectric characterization are complementary methods which provide a better understanding of the domain wall motion.
format	article
author	C. Borderon A. E. Brunier K. Nadaud R. Renoud M. Alexe H. W. Gundel
author_facet	C. Borderon A. E. Brunier K. Nadaud R. Renoud M. Alexe H. W. Gundel
author_sort	C. Borderon
title	Domain wall motion in Pb(Zr0.20Ti0.80)O3 epitaxial thin films
title_short	Domain wall motion in Pb(Zr0.20Ti0.80)O3 epitaxial thin films
title_full	Domain wall motion in Pb(Zr0.20Ti0.80)O3 epitaxial thin films
title_fullStr	Domain wall motion in Pb(Zr0.20Ti0.80)O3 epitaxial thin films
title_full_unstemmed	Domain wall motion in Pb(Zr0.20Ti0.80)O3 epitaxial thin films
title_sort	domain wall motion in pb(zr0.20ti0.80)o3 epitaxial thin films
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/53b08474c139481ea4c67cc861b758df
work_keys_str_mv	AT cborderon domainwallmotioninpbzr020ti080o3epitaxialthinfilms AT aebrunier domainwallmotioninpbzr020ti080o3epitaxialthinfilms AT knadaud domainwallmotioninpbzr020ti080o3epitaxialthinfilms AT rrenoud domainwallmotioninpbzr020ti080o3epitaxialthinfilms AT malexe domainwallmotioninpbzr020ti080o3epitaxialthinfilms AT hwgundel domainwallmotioninpbzr020ti080o3epitaxialthinfilms
_version_	1718394984143519744

Domain wall motion in Pb(Zr0.20Ti0.80)O3 epitaxial thin films

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