Theory of Inverse Edelstein Effect of The Surface States of A Topological Insulator

Abstract The surface states of three-dimensional topological insulators possess the unique property of spin-momentum interlocking. This property gives rise to the interesting inverse Edelstein effect (IEE), in which an applied spin bias μ is converted to a measurable charge voltage difference V. We...

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Autores principales:	H. Geng, W. Luo, W. Y. Deng, L. Sheng, R. Shen, D. Y. Xing
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/53d4a6b915844b3aaecf7d16fbd9eb0b
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id	oai:doaj.org-article:53d4a6b915844b3aaecf7d16fbd9eb0b
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spelling	oai:doaj.org-article:53d4a6b915844b3aaecf7d16fbd9eb0b2021-12-02T11:52:41ZTheory of Inverse Edelstein Effect of The Surface States of A Topological Insulator10.1038/s41598-017-03346-z2045-2322https://doaj.org/article/53d4a6b915844b3aaecf7d16fbd9eb0b2017-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-03346-zhttps://doaj.org/toc/2045-2322Abstract The surface states of three-dimensional topological insulators possess the unique property of spin-momentum interlocking. This property gives rise to the interesting inverse Edelstein effect (IEE), in which an applied spin bias μ is converted to a measurable charge voltage difference V. We develop a semiclassical theory for the IEE of the surface states of Bi2Se3 thin films, which is applicable from the ballistic regime to diffusive regime. We find that the efficiency of the spin-charge conversion, defined as γ = V/μ, exhibits a universal dependence on the ratio between sample size and electron mean free path. The efficiency increases from γ = π/4 in the ballistic limit to γ = π in the diffusive limit, suggesting that sufficient strength of impurity scattering is favorable for the IEE.H. GengW. LuoW. Y. DengL. ShengR. ShenD. Y. XingNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-7 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q H. Geng W. Luo W. Y. Deng L. Sheng R. Shen D. Y. Xing Theory of Inverse Edelstein Effect of The Surface States of A Topological Insulator
description	Abstract The surface states of three-dimensional topological insulators possess the unique property of spin-momentum interlocking. This property gives rise to the interesting inverse Edelstein effect (IEE), in which an applied spin bias μ is converted to a measurable charge voltage difference V. We develop a semiclassical theory for the IEE of the surface states of Bi2Se3 thin films, which is applicable from the ballistic regime to diffusive regime. We find that the efficiency of the spin-charge conversion, defined as γ = V/μ, exhibits a universal dependence on the ratio between sample size and electron mean free path. The efficiency increases from γ = π/4 in the ballistic limit to γ = π in the diffusive limit, suggesting that sufficient strength of impurity scattering is favorable for the IEE.
format	article
author	H. Geng W. Luo W. Y. Deng L. Sheng R. Shen D. Y. Xing
author_facet	H. Geng W. Luo W. Y. Deng L. Sheng R. Shen D. Y. Xing
author_sort	H. Geng
title	Theory of Inverse Edelstein Effect of The Surface States of A Topological Insulator
title_short	Theory of Inverse Edelstein Effect of The Surface States of A Topological Insulator
title_full	Theory of Inverse Edelstein Effect of The Surface States of A Topological Insulator
title_fullStr	Theory of Inverse Edelstein Effect of The Surface States of A Topological Insulator
title_full_unstemmed	Theory of Inverse Edelstein Effect of The Surface States of A Topological Insulator
title_sort	theory of inverse edelstein effect of the surface states of a topological insulator
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/53d4a6b915844b3aaecf7d16fbd9eb0b
work_keys_str_mv	AT hgeng theoryofinverseedelsteineffectofthesurfacestatesofatopologicalinsulator AT wluo theoryofinverseedelsteineffectofthesurfacestatesofatopologicalinsulator AT wydeng theoryofinverseedelsteineffectofthesurfacestatesofatopologicalinsulator AT lsheng theoryofinverseedelsteineffectofthesurfacestatesofatopologicalinsulator AT rshen theoryofinverseedelsteineffectofthesurfacestatesofatopologicalinsulator AT dyxing theoryofinverseedelsteineffectofthesurfacestatesofatopologicalinsulator
_version_	1718394984322826240

Theory of Inverse Edelstein Effect of The Surface States of A Topological Insulator

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