Benchmarking monolayer MoS2 and WS2 field-effect transistors

Here, the authors perform a benchmark study of field-effect transistors (FETs) based on 2D transition metal dichalcogenides, i.e., 230 MoS2 and 160 WS2 FETs, and track device-to-device variations to gauge the technological viability in future integrated circuits.

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Autores principales:	Amritanand Sebastian, Rahul Pendurthi, Tanushree H. Choudhury, Joan M. Redwing, Saptarshi Das
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/54929cb5317e408495cdba1f5f85769e
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id	oai:doaj.org-article:54929cb5317e408495cdba1f5f85769e
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spelling	oai:doaj.org-article:54929cb5317e408495cdba1f5f85769e2021-12-02T10:47:59ZBenchmarking monolayer MoS2 and WS2 field-effect transistors10.1038/s41467-020-20732-w2041-1723https://doaj.org/article/54929cb5317e408495cdba1f5f85769e2021-01-01T00:00:00Zhttps://doi.org/10.1038/s41467-020-20732-whttps://doaj.org/toc/2041-1723Here, the authors perform a benchmark study of field-effect transistors (FETs) based on 2D transition metal dichalcogenides, i.e., 230 MoS2 and 160 WS2 FETs, and track device-to-device variations to gauge the technological viability in future integrated circuits.Amritanand SebastianRahul PendurthiTanushree H. ChoudhuryJoan M. RedwingSaptarshi DasNature PortfolioarticleScienceQENNature Communications, Vol 12, Iss 1, Pp 1-12 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Amritanand Sebastian Rahul Pendurthi Tanushree H. Choudhury Joan M. Redwing Saptarshi Das Benchmarking monolayer MoS2 and WS2 field-effect transistors
description	Here, the authors perform a benchmark study of field-effect transistors (FETs) based on 2D transition metal dichalcogenides, i.e., 230 MoS2 and 160 WS2 FETs, and track device-to-device variations to gauge the technological viability in future integrated circuits.
format	article
author	Amritanand Sebastian Rahul Pendurthi Tanushree H. Choudhury Joan M. Redwing Saptarshi Das
author_facet	Amritanand Sebastian Rahul Pendurthi Tanushree H. Choudhury Joan M. Redwing Saptarshi Das
author_sort	Amritanand Sebastian
title	Benchmarking monolayer MoS2 and WS2 field-effect transistors
title_short	Benchmarking monolayer MoS2 and WS2 field-effect transistors
title_full	Benchmarking monolayer MoS2 and WS2 field-effect transistors
title_fullStr	Benchmarking monolayer MoS2 and WS2 field-effect transistors
title_full_unstemmed	Benchmarking monolayer MoS2 and WS2 field-effect transistors
title_sort	benchmarking monolayer mos2 and ws2 field-effect transistors
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/54929cb5317e408495cdba1f5f85769e
work_keys_str_mv	AT amritanandsebastian benchmarkingmonolayermos2andws2fieldeffecttransistors AT rahulpendurthi benchmarkingmonolayermos2andws2fieldeffecttransistors AT tanushreehchoudhury benchmarkingmonolayermos2andws2fieldeffecttransistors AT joanmredwing benchmarkingmonolayermos2andws2fieldeffecttransistors AT saptarshidas benchmarkingmonolayermos2andws2fieldeffecttransistors
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Benchmarking monolayer MoS2 and WS2 field-effect transistors

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