Benchmarking monolayer MoS2 and WS2 field-effect transistors
Here, the authors perform a benchmark study of field-effect transistors (FETs) based on 2D transition metal dichalcogenides, i.e., 230 MoS2 and 160 WS2 FETs, and track device-to-device variations to gauge the technological viability in future integrated circuits.
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| Main Authors: | , , , , |
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| Format: | article |
| Language: | EN |
| Published: |
Nature Portfolio
2021
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| Subjects: | |
| Online Access: | https://doaj.org/article/54929cb5317e408495cdba1f5f85769e |
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