Pecvd in-situ growth of silicon quantum dots in dielectric matrix for third generation photovoltaics
Silicon nanostructures have interesting possible applications in third generation photo- voltaics. The fabrication techniques for Si quantum dots in dielectric matrix usually involve a high-temperature post-deposition annealing. Here we report on the spontaneous growth of silicon quantum dots in...
Guardado en:
| Autores principales: | , , , |
|---|---|
| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2009
|
| Materias: | |
| Acceso en línea: | https://doaj.org/article/54a4d6b73db94ae98f0d4b7a22818e86 |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| Sumario: | Silicon nanostructures have interesting possible applications in third generation photo-
voltaics. The fabrication techniques for Si quantum dots in dielectric matrix usually involve a
high-temperature post-deposition annealing. Here we report on the spontaneous growth of
silicon quantum dots in silicon nitride films by plasma enhanced chemical vapour deposition
(PECVD) at 300°C using two different gas mixtures. Room temperature photoluminescence
(PL) has been observed, and tuning of PL emission has been demonstrated by adjusting the
gas flow rates. The effect of the strongly absorbing Si nanostructures in the silicon nitride matrix on the absorption properties has been also investigated. |
|---|