Pecvd in-situ growth of silicon quantum dots in dielectric matrix for third generation photovoltaics

Silicon nanostructures have interesting possible applications in third generation photo- voltaics. The fabrication techniques for Si quantum dots in dielectric matrix usually involve a high-temperature post-deposition annealing. Here we report on the spontaneous growth of silicon quantum dots in...

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Autores principales:	Usatîi, Iurie, Mercaldo, L, Veneri, P, Privato, Carlo
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2009
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/54a4d6b73db94ae98f0d4b7a22818e86
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spelling	oai:doaj.org-article:54a4d6b73db94ae98f0d4b7a22818e862021-11-21T12:05:19ZPecvd in-situ growth of silicon quantum dots in dielectric matrix for third generation photovoltaics2537-63651810-648Xhttps://doaj.org/article/54a4d6b73db94ae98f0d4b7a22818e862009-05-01T00:00:00Zhttps://mjps.nanotech.md/archive/2009/article/4051https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Silicon nanostructures have interesting possible applications in third generation photo- voltaics. The fabrication techniques for Si quantum dots in dielectric matrix usually involve a high-temperature post-deposition annealing. Here we report on the spontaneous growth of silicon quantum dots in silicon nitride films by plasma enhanced chemical vapour deposition (PECVD) at 300°C using two different gas mixtures. Room temperature photoluminescence (PL) has been observed, and tuning of PL emission has been demonstrated by adjusting the gas flow rates. The effect of the strongly absorbing Si nanostructures in the silicon nitride matrix on the absorption properties has been also investigated. Usatîi, IurieMercaldo, LVeneri, PPrivato, CarloD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 8, Iss 2, Pp 195-200 (2009)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Usatîi, Iurie Mercaldo, L Veneri, P Privato, Carlo Pecvd in-situ growth of silicon quantum dots in dielectric matrix for third generation photovoltaics
description	Silicon nanostructures have interesting possible applications in third generation photo- voltaics. The fabrication techniques for Si quantum dots in dielectric matrix usually involve a high-temperature post-deposition annealing. Here we report on the spontaneous growth of silicon quantum dots in silicon nitride films by plasma enhanced chemical vapour deposition (PECVD) at 300°C using two different gas mixtures. Room temperature photoluminescence (PL) has been observed, and tuning of PL emission has been demonstrated by adjusting the gas flow rates. The effect of the strongly absorbing Si nanostructures in the silicon nitride matrix on the absorption properties has been also investigated.
format	article
author	Usatîi, Iurie Mercaldo, L Veneri, P Privato, Carlo
author_facet	Usatîi, Iurie Mercaldo, L Veneri, P Privato, Carlo
author_sort	Usatîi, Iurie
title	Pecvd in-situ growth of silicon quantum dots in dielectric matrix for third generation photovoltaics
title_short	Pecvd in-situ growth of silicon quantum dots in dielectric matrix for third generation photovoltaics
title_full	Pecvd in-situ growth of silicon quantum dots in dielectric matrix for third generation photovoltaics
title_fullStr	Pecvd in-situ growth of silicon quantum dots in dielectric matrix for third generation photovoltaics
title_full_unstemmed	Pecvd in-situ growth of silicon quantum dots in dielectric matrix for third generation photovoltaics
title_sort	pecvd in-situ growth of silicon quantum dots in dielectric matrix for third generation photovoltaics
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2009
url	https://doaj.org/article/54a4d6b73db94ae98f0d4b7a22818e86
work_keys_str_mv	AT usatiiiurie pecvdinsitugrowthofsiliconquantumdotsindielectricmatrixforthirdgenerationphotovoltaics AT mercaldol pecvdinsitugrowthofsiliconquantumdotsindielectricmatrixforthirdgenerationphotovoltaics AT venerip pecvdinsitugrowthofsiliconquantumdotsindielectricmatrixforthirdgenerationphotovoltaics AT privatocarlo pecvdinsitugrowthofsiliconquantumdotsindielectricmatrixforthirdgenerationphotovoltaics
_version_	1718419245784629248

Pecvd in-situ growth of silicon quantum dots in dielectric matrix for third generation photovoltaics

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