Modeling of Memristors under Periodic Signals of Different Parameters

In this paper, the problem of modeling memristors is studied. Two types of memristors with carbon and tungsten doping fabricated by the Knowm Inc. are tested. The memristors have been examined with either sinusoidal or triangle voltage wave periodic excitation. Some different frequencies, amplitudes...

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Autor principal:	Bartłomiej Garda
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	SDC memristor memristor modeling measurements Strukov model Biolek window VTEAM model Technology T
Acceso en línea:	https://doaj.org/article/54abe90ef3024ab2bc3fa85a57c0c3ef
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spelling	oai:doaj.org-article:54abe90ef3024ab2bc3fa85a57c0c3ef2021-11-11T16:01:08ZModeling of Memristors under Periodic Signals of Different Parameters10.3390/en142172641996-1073https://doaj.org/article/54abe90ef3024ab2bc3fa85a57c0c3ef2021-11-01T00:00:00Zhttps://www.mdpi.com/1996-1073/14/21/7264https://doaj.org/toc/1996-1073In this paper, the problem of modeling memristors is studied. Two types of memristors with carbon and tungsten doping fabricated by the Knowm Inc. are tested. The memristors have been examined with either sinusoidal or triangle voltage wave periodic excitation. Some different frequencies, amplitudes and signal shapes have been applied. The collected data have been averaged and subjected to high frequency filtering. The quality of measurement data has also been discussed. The averaged measurement has been modeled using three popular memristor models: Strukov, Biolek and VTEAM. Some additional feathers to the considered models have been proposed and tested. Memristor is usually modeled by a set of algebraic-differential equations which link both electrical values (i.e., voltage and current) and the internal variable(s) responsible for the element dynamics. The interior-point with box constrains optimization method has been used to obtain the optimal parameters of the memristor model that fit best to the collected data. The results of the optimization process have been discussed and compared. The sensitivity to the different frequency range has been also examined and reviewed. Some conclusions and future work ideas have been postulated.Bartłomiej GardaMDPI AGarticleSDC memristormemristor modelingmeasurementsStrukov modelBiolek windowVTEAM modelTechnologyTENEnergies, Vol 14, Iss 7264, p 7264 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	SDC memristor memristor modeling measurements Strukov model Biolek window VTEAM model Technology T
spellingShingle	SDC memristor memristor modeling measurements Strukov model Biolek window VTEAM model Technology T Bartłomiej Garda Modeling of Memristors under Periodic Signals of Different Parameters
description	In this paper, the problem of modeling memristors is studied. Two types of memristors with carbon and tungsten doping fabricated by the Knowm Inc. are tested. The memristors have been examined with either sinusoidal or triangle voltage wave periodic excitation. Some different frequencies, amplitudes and signal shapes have been applied. The collected data have been averaged and subjected to high frequency filtering. The quality of measurement data has also been discussed. The averaged measurement has been modeled using three popular memristor models: Strukov, Biolek and VTEAM. Some additional feathers to the considered models have been proposed and tested. Memristor is usually modeled by a set of algebraic-differential equations which link both electrical values (i.e., voltage and current) and the internal variable(s) responsible for the element dynamics. The interior-point with box constrains optimization method has been used to obtain the optimal parameters of the memristor model that fit best to the collected data. The results of the optimization process have been discussed and compared. The sensitivity to the different frequency range has been also examined and reviewed. Some conclusions and future work ideas have been postulated.
format	article
author	Bartłomiej Garda
author_facet	Bartłomiej Garda
author_sort	Bartłomiej Garda
title	Modeling of Memristors under Periodic Signals of Different Parameters
title_short	Modeling of Memristors under Periodic Signals of Different Parameters
title_full	Modeling of Memristors under Periodic Signals of Different Parameters
title_fullStr	Modeling of Memristors under Periodic Signals of Different Parameters
title_full_unstemmed	Modeling of Memristors under Periodic Signals of Different Parameters
title_sort	modeling of memristors under periodic signals of different parameters
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/54abe90ef3024ab2bc3fa85a57c0c3ef
work_keys_str_mv	AT bartłomiejgarda modelingofmemristorsunderperiodicsignalsofdifferentparameters
_version_	1718432413158211584

Modeling of Memristors under Periodic Signals of Different Parameters

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