Optical properties of Cu(In, Ga)(S, Se)2 films for solar cells

In this paper, we present structural and optical properties of single-phase Cu(In, Ga)(S, Se)2 alloys, which have been prepared using a novel selenization/sulfurization growth process to react copper-indium-gallium alloy films. The grown scheme differs critically from standard two-step grown proce...

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Autores principales: Tivanov, M., Zareţcaia, E., Gremenok, V., Ivanova, V., Mudrîi, A., Ivaniukovici, A., Zalesski, V., Zikotinski, S., Bente, K.
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Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2007
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spelling oai:doaj.org-article:54d634cc77944b85bd73189a831de21c2021-11-21T12:08:49ZOptical properties of Cu(In, Ga)(S, Se)2 films for solar cells 2537-63651810-648Xhttps://doaj.org/article/54d634cc77944b85bd73189a831de21c2007-01-01T00:00:00Zhttps://mjps.nanotech.md/archive/2007/article/3696https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365In this paper, we present structural and optical properties of single-phase Cu(In, Ga)(S, Se)2 alloys, which have been prepared using a novel selenization/sulfurization growth process to react copper-indium-gallium alloy films. The grown scheme differs critically from standard two-step grown processes and was carried out without toxic H2S and H2Se gases. The calculated band gap values for layers with varying sulfur content (i.e. S/(S Se) = 0.16 and 0.19), determined from optical transmission and reflectance measurements, were found to be 1.17 and 1.23 eV respectively. The low temperature PL measurements also confirmed the shift in the band gap of the CIGSS absorber films with sulfur incorporation. In summary, this reaction process produced single-phase CIGSS thin films with controlled sulfur amount suitable for photovoltaic application. Tivanov, M.Zareţcaia, E.Gremenok, V.Ivanova, V.Mudrîi, A.Ivaniukovici, A.Zalesski, V.Zikotinski, S.Bente, K.D.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 6, Iss 1, Pp 117-122 (2007)
institution DOAJ
collection DOAJ
language EN
topic Physics
QC1-999
Electronics
TK7800-8360
spellingShingle Physics
QC1-999
Electronics
TK7800-8360
Tivanov, M.
Zareţcaia, E.
Gremenok, V.
Ivanova, V.
Mudrîi, A.
Ivaniukovici, A.
Zalesski, V.
Zikotinski, S.
Bente, K.
Optical properties of Cu(In, Ga)(S, Se)2 films for solar cells
description In this paper, we present structural and optical properties of single-phase Cu(In, Ga)(S, Se)2 alloys, which have been prepared using a novel selenization/sulfurization growth process to react copper-indium-gallium alloy films. The grown scheme differs critically from standard two-step grown processes and was carried out without toxic H2S and H2Se gases. The calculated band gap values for layers with varying sulfur content (i.e. S/(S Se) = 0.16 and 0.19), determined from optical transmission and reflectance measurements, were found to be 1.17 and 1.23 eV respectively. The low temperature PL measurements also confirmed the shift in the band gap of the CIGSS absorber films with sulfur incorporation. In summary, this reaction process produced single-phase CIGSS thin films with controlled sulfur amount suitable for photovoltaic application.
format article
author Tivanov, M.
Zareţcaia, E.
Gremenok, V.
Ivanova, V.
Mudrîi, A.
Ivaniukovici, A.
Zalesski, V.
Zikotinski, S.
Bente, K.
author_facet Tivanov, M.
Zareţcaia, E.
Gremenok, V.
Ivanova, V.
Mudrîi, A.
Ivaniukovici, A.
Zalesski, V.
Zikotinski, S.
Bente, K.
author_sort Tivanov, M.
title Optical properties of Cu(In, Ga)(S, Se)2 films for solar cells
title_short Optical properties of Cu(In, Ga)(S, Se)2 films for solar cells
title_full Optical properties of Cu(In, Ga)(S, Se)2 films for solar cells
title_fullStr Optical properties of Cu(In, Ga)(S, Se)2 films for solar cells
title_full_unstemmed Optical properties of Cu(In, Ga)(S, Se)2 films for solar cells
title_sort optical properties of cu(in, ga)(s, se)2 films for solar cells
publisher D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate 2007
url https://doaj.org/article/54d634cc77944b85bd73189a831de21c
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