Optical properties of Cu(In, Ga)(S, Se)2 films for solar cells
In this paper, we present structural and optical properties of single-phase Cu(In, Ga)(S, Se)2 alloys, which have been prepared using a novel selenization/sulfurization growth process to react copper-indium-gallium alloy films. The grown scheme differs critically from standard two-step grown proce...
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D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2007
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oai:doaj.org-article:54d634cc77944b85bd73189a831de21c2021-11-21T12:08:49ZOptical properties of Cu(In, Ga)(S, Se)2 films for solar cells 2537-63651810-648Xhttps://doaj.org/article/54d634cc77944b85bd73189a831de21c2007-01-01T00:00:00Zhttps://mjps.nanotech.md/archive/2007/article/3696https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365In this paper, we present structural and optical properties of single-phase Cu(In, Ga)(S, Se)2 alloys, which have been prepared using a novel selenization/sulfurization growth process to react copper-indium-gallium alloy films. The grown scheme differs critically from standard two-step grown processes and was carried out without toxic H2S and H2Se gases. The calculated band gap values for layers with varying sulfur content (i.e. S/(S Se) = 0.16 and 0.19), determined from optical transmission and reflectance measurements, were found to be 1.17 and 1.23 eV respectively. The low temperature PL measurements also confirmed the shift in the band gap of the CIGSS absorber films with sulfur incorporation. In summary, this reaction process produced single-phase CIGSS thin films with controlled sulfur amount suitable for photovoltaic application. Tivanov, M.Zareţcaia, E.Gremenok, V.Ivanova, V.Mudrîi, A.Ivaniukovici, A.Zalesski, V.Zikotinski, S.Bente, K.D.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 6, Iss 1, Pp 117-122 (2007) |
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Physics QC1-999 Electronics TK7800-8360 |
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Physics QC1-999 Electronics TK7800-8360 Tivanov, M. Zareţcaia, E. Gremenok, V. Ivanova, V. Mudrîi, A. Ivaniukovici, A. Zalesski, V. Zikotinski, S. Bente, K. Optical properties of Cu(In, Ga)(S, Se)2 films for solar cells |
description |
In this paper, we present structural and optical properties of single-phase
Cu(In, Ga)(S, Se)2 alloys, which have been prepared using a novel selenization/sulfurization
growth process to react copper-indium-gallium alloy films. The grown scheme differs critically from standard two-step grown processes and was carried out without toxic H2S and
H2Se gases. The calculated band gap values for layers with varying sulfur content (i.e.
S/(S Se) = 0.16 and 0.19), determined from optical transmission and reflectance measurements, were found to be 1.17 and 1.23 eV respectively. The low temperature PL measurements also confirmed the shift in the band gap of the CIGSS absorber films with sulfur
incorporation.
In summary, this reaction process produced single-phase CIGSS thin films with controlled sulfur amount suitable for photovoltaic application. |
format |
article |
author |
Tivanov, M. Zareţcaia, E. Gremenok, V. Ivanova, V. Mudrîi, A. Ivaniukovici, A. Zalesski, V. Zikotinski, S. Bente, K. |
author_facet |
Tivanov, M. Zareţcaia, E. Gremenok, V. Ivanova, V. Mudrîi, A. Ivaniukovici, A. Zalesski, V. Zikotinski, S. Bente, K. |
author_sort |
Tivanov, M. |
title |
Optical properties of Cu(In, Ga)(S, Se)2 films for solar cells |
title_short |
Optical properties of Cu(In, Ga)(S, Se)2 films for solar cells |
title_full |
Optical properties of Cu(In, Ga)(S, Se)2 films for solar cells |
title_fullStr |
Optical properties of Cu(In, Ga)(S, Se)2 films for solar cells |
title_full_unstemmed |
Optical properties of Cu(In, Ga)(S, Se)2 films for solar cells |
title_sort |
optical properties of cu(in, ga)(s, se)2 films for solar cells |
publisher |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies |
publishDate |
2007 |
url |
https://doaj.org/article/54d634cc77944b85bd73189a831de21c |
work_keys_str_mv |
AT tivanovm opticalpropertiesofcuingasse2filmsforsolarcells AT zaretcaiae opticalpropertiesofcuingasse2filmsforsolarcells AT gremenokv opticalpropertiesofcuingasse2filmsforsolarcells AT ivanovav opticalpropertiesofcuingasse2filmsforsolarcells AT mudriia opticalpropertiesofcuingasse2filmsforsolarcells AT ivaniukovicia opticalpropertiesofcuingasse2filmsforsolarcells AT zalesskiv opticalpropertiesofcuingasse2filmsforsolarcells AT zikotinskis opticalpropertiesofcuingasse2filmsforsolarcells AT bentek opticalpropertiesofcuingasse2filmsforsolarcells |
_version_ |
1718419185380360192 |