Effective Landé factors for an electrostatically defined quantum point contact in silicene

Abstract The transconductance and effective Landé $$g^*$$ g ∗ factors for a quantum point contact defined in silicene by the electric field of a split gate is investigated. The strong spin–orbit coupling in buckled silicene reduces the $$g^*$$ g ∗ factor for in-plane magnetic field from the nominal...

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Autores principales: Bartłomiej Rzeszotarski, Alina Mreńca-Kolasińska, François M. Peeters, Bartłomiej Szafran
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Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/55d53596cc0e4f8b83296bc746c42087
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spelling oai:doaj.org-article:55d53596cc0e4f8b83296bc746c420872021-12-02T18:37:08ZEffective Landé factors for an electrostatically defined quantum point contact in silicene10.1038/s41598-021-99074-62045-2322https://doaj.org/article/55d53596cc0e4f8b83296bc746c420872021-10-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-99074-6https://doaj.org/toc/2045-2322Abstract The transconductance and effective Landé $$g^*$$ g ∗ factors for a quantum point contact defined in silicene by the electric field of a split gate is investigated. The strong spin–orbit coupling in buckled silicene reduces the $$g^*$$ g ∗ factor for in-plane magnetic field from the nominal value 2 to around 1.2 for the first- to 0.45 for the third conduction subband. However, for perpendicular magnetic field we observe an enhancement of $$g^*$$ g ∗ factors for the first subband to 5.8 in nanoribbon with zigzag and to 2.5 with armchair edge. The main contribution to the Zeeman splitting comes from the intrinsic spin–orbit coupling defined by the Kane–Mele form of interaction.Bartłomiej RzeszotarskiAlina Mreńca-KolasińskaFrançois M. PeetersBartłomiej SzafranNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Bartłomiej Rzeszotarski
Alina Mreńca-Kolasińska
François M. Peeters
Bartłomiej Szafran
Effective Landé factors for an electrostatically defined quantum point contact in silicene
description Abstract The transconductance and effective Landé $$g^*$$ g ∗ factors for a quantum point contact defined in silicene by the electric field of a split gate is investigated. The strong spin–orbit coupling in buckled silicene reduces the $$g^*$$ g ∗ factor for in-plane magnetic field from the nominal value 2 to around 1.2 for the first- to 0.45 for the third conduction subband. However, for perpendicular magnetic field we observe an enhancement of $$g^*$$ g ∗ factors for the first subband to 5.8 in nanoribbon with zigzag and to 2.5 with armchair edge. The main contribution to the Zeeman splitting comes from the intrinsic spin–orbit coupling defined by the Kane–Mele form of interaction.
format article
author Bartłomiej Rzeszotarski
Alina Mreńca-Kolasińska
François M. Peeters
Bartłomiej Szafran
author_facet Bartłomiej Rzeszotarski
Alina Mreńca-Kolasińska
François M. Peeters
Bartłomiej Szafran
author_sort Bartłomiej Rzeszotarski
title Effective Landé factors for an electrostatically defined quantum point contact in silicene
title_short Effective Landé factors for an electrostatically defined quantum point contact in silicene
title_full Effective Landé factors for an electrostatically defined quantum point contact in silicene
title_fullStr Effective Landé factors for an electrostatically defined quantum point contact in silicene
title_full_unstemmed Effective Landé factors for an electrostatically defined quantum point contact in silicene
title_sort effective landé factors for an electrostatically defined quantum point contact in silicene
publisher Nature Portfolio
publishDate 2021
url https://doaj.org/article/55d53596cc0e4f8b83296bc746c42087
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AT alinamrencakolasinska effectivelandefactorsforanelectrostaticallydefinedquantumpointcontactinsilicene
AT francoismpeeters effectivelandefactorsforanelectrostaticallydefinedquantumpointcontactinsilicene
AT bartłomiejszafran effectivelandefactorsforanelectrostaticallydefinedquantumpointcontactinsilicene
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