Effective Landé factors for an electrostatically defined quantum point contact in silicene
Abstract The transconductance and effective Landé $$g^*$$ g ∗ factors for a quantum point contact defined in silicene by the electric field of a split gate is investigated. The strong spin–orbit coupling in buckled silicene reduces the $$g^*$$ g ∗ factor for in-plane magnetic field from the nominal...
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| Autores principales: | , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/55d53596cc0e4f8b83296bc746c42087 |
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