Seamless lateral graphene p–n junctions formed by selective in situ doping for high-performance photodetectors

Fabricating lateral graphene p–n junctions with controlled doping levels is instrumental to realize ultrafast and efficient optoelectronic devices. Here, the authors report a seamless graphene based photodetector doped by selective ion implantation and in-situ chemical vapour deposition.

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Detalles Bibliográficos
Autores principales:	Gang Wang, Miao Zhang, Da Chen, Qinglei Guo, Xuefei Feng, Tianchao Niu, Xiaosong Liu, Ang Li, Jiawei Lai, Dong Sun, Zhimin Liao, Yongqiang Wang, Paul K. Chu, Guqiao Ding, Xiaoming Xie, Zengfeng Di, Xi Wang
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/55da7a3c9970484d8537216696b422f0
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spelling	oai:doaj.org-article:55da7a3c9970484d8537216696b422f02021-12-02T16:56:57ZSeamless lateral graphene p–n junctions formed by selective in situ doping for high-performance photodetectors10.1038/s41467-018-07555-62041-1723https://doaj.org/article/55da7a3c9970484d8537216696b422f02018-12-01T00:00:00Zhttps://doi.org/10.1038/s41467-018-07555-6https://doaj.org/toc/2041-1723Fabricating lateral graphene p–n junctions with controlled doping levels is instrumental to realize ultrafast and efficient optoelectronic devices. Here, the authors report a seamless graphene based photodetector doped by selective ion implantation and in-situ chemical vapour deposition.Gang WangMiao ZhangDa ChenQinglei GuoXuefei FengTianchao NiuXiaosong LiuAng LiJiawei LaiDong SunZhimin LiaoYongqiang WangPaul K. ChuGuqiao DingXiaoming XieZengfeng DiXi WangNature PortfolioarticleScienceQENNature Communications, Vol 9, Iss 1, Pp 1-9 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Gang Wang Miao Zhang Da Chen Qinglei Guo Xuefei Feng Tianchao Niu Xiaosong Liu Ang Li Jiawei Lai Dong Sun Zhimin Liao Yongqiang Wang Paul K. Chu Guqiao Ding Xiaoming Xie Zengfeng Di Xi Wang Seamless lateral graphene p–n junctions formed by selective in situ doping for high-performance photodetectors
description	Fabricating lateral graphene p–n junctions with controlled doping levels is instrumental to realize ultrafast and efficient optoelectronic devices. Here, the authors report a seamless graphene based photodetector doped by selective ion implantation and in-situ chemical vapour deposition.
format	article
author	Gang Wang Miao Zhang Da Chen Qinglei Guo Xuefei Feng Tianchao Niu Xiaosong Liu Ang Li Jiawei Lai Dong Sun Zhimin Liao Yongqiang Wang Paul K. Chu Guqiao Ding Xiaoming Xie Zengfeng Di Xi Wang
author_facet	Gang Wang Miao Zhang Da Chen Qinglei Guo Xuefei Feng Tianchao Niu Xiaosong Liu Ang Li Jiawei Lai Dong Sun Zhimin Liao Yongqiang Wang Paul K. Chu Guqiao Ding Xiaoming Xie Zengfeng Di Xi Wang
author_sort	Gang Wang
title	Seamless lateral graphene p–n junctions formed by selective in situ doping for high-performance photodetectors
title_short	Seamless lateral graphene p–n junctions formed by selective in situ doping for high-performance photodetectors
title_full	Seamless lateral graphene p–n junctions formed by selective in situ doping for high-performance photodetectors
title_fullStr	Seamless lateral graphene p–n junctions formed by selective in situ doping for high-performance photodetectors
title_full_unstemmed	Seamless lateral graphene p–n junctions formed by selective in situ doping for high-performance photodetectors
title_sort	seamless lateral graphene p–n junctions formed by selective in situ doping for high-performance photodetectors
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/55da7a3c9970484d8537216696b422f0
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Seamless lateral graphene p–n junctions formed by selective in situ doping for high-performance photodetectors

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