Near-Zero-Power Temperature Sensing via Tunneling Currents Through Complementary Metal-Oxide-Semiconductor Transistors

Abstract Temperature sensors are routinely found in devices used to monitor the environment, the human body, industrial equipment, and beyond. In many such applications, the energy available from batteries or the power available from energy harvesters is extremely limited due to limited available vo...

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Autores principales:	Hui Wang, Patrick P. Mercier
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/55e32f06e9114643bfd64466d1e572ab
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spelling	oai:doaj.org-article:55e32f06e9114643bfd64466d1e572ab2021-12-02T16:06:57ZNear-Zero-Power Temperature Sensing via Tunneling Currents Through Complementary Metal-Oxide-Semiconductor Transistors10.1038/s41598-017-04705-62045-2322https://doaj.org/article/55e32f06e9114643bfd64466d1e572ab2017-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-04705-6https://doaj.org/toc/2045-2322Abstract Temperature sensors are routinely found in devices used to monitor the environment, the human body, industrial equipment, and beyond. In many such applications, the energy available from batteries or the power available from energy harvesters is extremely limited due to limited available volume, and thus the power consumption of sensing should be minimized in order to maximize operational lifetime. Here we present a new method to transduce and digitize temperature at very low power levels. Specifically, two pA current references are generated via small tunneling-current metal-oxide-semiconductor field effect transistors (MOSFETs) that are independent and proportional to temperature, respectively, which are then used to charge digitally-controllable banks of metal-insulator-metal (MIM) capacitors that, via a discrete-time feedback loop that equalizes charging time, digitize temperature directly. The proposed temperature sensor was integrated into a silicon microchip and occupied 0.15 mm2 of area. Four tested microchips were measured to consume only 113 pW with a resolution of 0.21 °C and an inaccuracy of ±1.65 °C, which represents a 628× reduction in power compared to prior-art without a significant reduction in performance.Hui WangPatrick P. MercierNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-7 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Hui Wang Patrick P. Mercier Near-Zero-Power Temperature Sensing via Tunneling Currents Through Complementary Metal-Oxide-Semiconductor Transistors
description	Abstract Temperature sensors are routinely found in devices used to monitor the environment, the human body, industrial equipment, and beyond. In many such applications, the energy available from batteries or the power available from energy harvesters is extremely limited due to limited available volume, and thus the power consumption of sensing should be minimized in order to maximize operational lifetime. Here we present a new method to transduce and digitize temperature at very low power levels. Specifically, two pA current references are generated via small tunneling-current metal-oxide-semiconductor field effect transistors (MOSFETs) that are independent and proportional to temperature, respectively, which are then used to charge digitally-controllable banks of metal-insulator-metal (MIM) capacitors that, via a discrete-time feedback loop that equalizes charging time, digitize temperature directly. The proposed temperature sensor was integrated into a silicon microchip and occupied 0.15 mm2 of area. Four tested microchips were measured to consume only 113 pW with a resolution of 0.21 °C and an inaccuracy of ±1.65 °C, which represents a 628× reduction in power compared to prior-art without a significant reduction in performance.
format	article
author	Hui Wang Patrick P. Mercier
author_facet	Hui Wang Patrick P. Mercier
author_sort	Hui Wang
title	Near-Zero-Power Temperature Sensing via Tunneling Currents Through Complementary Metal-Oxide-Semiconductor Transistors
title_short	Near-Zero-Power Temperature Sensing via Tunneling Currents Through Complementary Metal-Oxide-Semiconductor Transistors
title_full	Near-Zero-Power Temperature Sensing via Tunneling Currents Through Complementary Metal-Oxide-Semiconductor Transistors
title_fullStr	Near-Zero-Power Temperature Sensing via Tunneling Currents Through Complementary Metal-Oxide-Semiconductor Transistors
title_full_unstemmed	Near-Zero-Power Temperature Sensing via Tunneling Currents Through Complementary Metal-Oxide-Semiconductor Transistors
title_sort	near-zero-power temperature sensing via tunneling currents through complementary metal-oxide-semiconductor transistors
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/55e32f06e9114643bfd64466d1e572ab
work_keys_str_mv	AT huiwang nearzeropowertemperaturesensingviatunnelingcurrentsthroughcomplementarymetaloxidesemiconductortransistors AT patrickpmercier nearzeropowertemperaturesensingviatunnelingcurrentsthroughcomplementarymetaloxidesemiconductortransistors
_version_	1718384775653228544

Near-Zero-Power Temperature Sensing via Tunneling Currents Through Complementary Metal-Oxide-Semiconductor Transistors

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