Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

Designing efficient, fast and low power consumption phase change memories remains a challenge. Aryana et al. propose a strategy to reduce operating currents by manipulating the interfacial thermal resistance between the phase change unit and the electrodes without incorporating additional insulating...

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Autores principales:	Kiumars Aryana, John T. Gaskins, Joyeeta Nag, Derek A. Stewart, Zhaoqiang Bai, Saikat Mukhopadhyay, John C. Read, David H. Olson, Eric R. Hoglund, James M. Howe, Ashutosh Giri, Michael K. Grobis, Patrick E. Hopkins
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/5604de4866a44c3cbb46d9cb810c801e
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spelling	oai:doaj.org-article:5604de4866a44c3cbb46d9cb810c801e2021-12-02T14:06:22ZInterface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices10.1038/s41467-020-20661-82041-1723https://doaj.org/article/5604de4866a44c3cbb46d9cb810c801e2021-02-01T00:00:00Zhttps://doi.org/10.1038/s41467-020-20661-8https://doaj.org/toc/2041-1723Designing efficient, fast and low power consumption phase change memories remains a challenge. Aryana et al. propose a strategy to reduce operating currents by manipulating the interfacial thermal resistance between the phase change unit and the electrodes without incorporating additional insulating layers.Kiumars AryanaJohn T. GaskinsJoyeeta NagDerek A. StewartZhaoqiang BaiSaikat MukhopadhyayJohn C. ReadDavid H. OlsonEric R. HoglundJames M. HoweAshutosh GiriMichael K. GrobisPatrick E. HopkinsNature PortfolioarticleScienceQENNature Communications, Vol 12, Iss 1, Pp 1-11 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Kiumars Aryana John T. Gaskins Joyeeta Nag Derek A. Stewart Zhaoqiang Bai Saikat Mukhopadhyay John C. Read David H. Olson Eric R. Hoglund James M. Howe Ashutosh Giri Michael K. Grobis Patrick E. Hopkins Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices
description	Designing efficient, fast and low power consumption phase change memories remains a challenge. Aryana et al. propose a strategy to reduce operating currents by manipulating the interfacial thermal resistance between the phase change unit and the electrodes without incorporating additional insulating layers.
format	article
author	Kiumars Aryana John T. Gaskins Joyeeta Nag Derek A. Stewart Zhaoqiang Bai Saikat Mukhopadhyay John C. Read David H. Olson Eric R. Hoglund James M. Howe Ashutosh Giri Michael K. Grobis Patrick E. Hopkins
author_facet	Kiumars Aryana John T. Gaskins Joyeeta Nag Derek A. Stewart Zhaoqiang Bai Saikat Mukhopadhyay John C. Read David H. Olson Eric R. Hoglund James M. Howe Ashutosh Giri Michael K. Grobis Patrick E. Hopkins
author_sort	Kiumars Aryana
title	Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices
title_short	Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices
title_full	Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices
title_fullStr	Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices
title_full_unstemmed	Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices
title_sort	interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/5604de4866a44c3cbb46d9cb810c801e
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Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

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