Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices
Designing efficient, fast and low power consumption phase change memories remains a challenge. Aryana et al. propose a strategy to reduce operating currents by manipulating the interfacial thermal resistance between the phase change unit and the electrodes without incorporating additional insulating...
Guardado en:
Autores principales: | Kiumars Aryana, John T. Gaskins, Joyeeta Nag, Derek A. Stewart, Zhaoqiang Bai, Saikat Mukhopadhyay, John C. Read, David H. Olson, Eric R. Hoglund, James M. Howe, Ashutosh Giri, Michael K. Grobis, Patrick E. Hopkins |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2021
|
Materias: | |
Acceso en línea: | https://doaj.org/article/5604de4866a44c3cbb46d9cb810c801e |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Tuning network topology and vibrational mode localization to achieve ultralow thermal conductivity in amorphous chalcogenides
por: Kiumars Aryana, et al.
Publicado: (2021) -
Near-infrared to ultra-violet frequency conversion in chalcogenide metasurfaces
por: Jiannan Gao, et al.
Publicado: (2021) -
Chalcogenide letters
Publicado: (2004) -
Chalcogenide Glass Microfibers for Mid-Infrared Optics
por: Dawei Cai, et al.
Publicado: (2021) -
High magnesium mobility in ternary spinel chalcogenides
por: Pieremanuele Canepa, et al.
Publicado: (2017)