Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices
Designing efficient, fast and low power consumption phase change memories remains a challenge. Aryana et al. propose a strategy to reduce operating currents by manipulating the interfacial thermal resistance between the phase change unit and the electrodes without incorporating additional insulating...
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Auteurs principaux: | Kiumars Aryana, John T. Gaskins, Joyeeta Nag, Derek A. Stewart, Zhaoqiang Bai, Saikat Mukhopadhyay, John C. Read, David H. Olson, Eric R. Hoglund, James M. Howe, Ashutosh Giri, Michael K. Grobis, Patrick E. Hopkins |
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Format: | article |
Langue: | EN |
Publié: |
Nature Portfolio
2021
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Sujets: | |
Accès en ligne: | https://doaj.org/article/5604de4866a44c3cbb46d9cb810c801e |
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