Numerical modeling of detection in contacts of bismuth-antimony alloy with different materials: influence of contact area and material factor

Diode detectors (DDs) are widely used in electronic information and communication systems. In this paper, the numerical modeling of the electrical potential distribution and current passing in contacts of a normal metal or a superconductor with a bismuth-antimony (Bi Sb) semiconductor alloy is condu...

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Autor principal:	Cherner, Iacov
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2014
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/5654460679504e8e9e86d12f953863f8
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spelling	oai:doaj.org-article:5654460679504e8e9e86d12f953863f82021-11-21T11:59:04ZNumerical modeling of detection in contacts of bismuth-antimony alloy with different materials: influence of contact area and material factor 538.91+544.6+621.315.592537-63651810-648Xhttps://doaj.org/article/5654460679504e8e9e86d12f953863f82014-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2014/article/39447https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Diode detectors (DDs) are widely used in electronic information and communication systems. In this paper, the numerical modeling of the electrical potential distribution and current passing in contacts of a normal metal or a superconductor with a bismuth-antimony (Bi Sb) semiconductor alloy is conducted. The possibilities of designing DDs based on these contacts to operate at the liquid helium temperature (T) of 4.2 K are explored. The dependences of current responsivity (CR), voltage responsivity (VR), and noise equivalent power (NEP) on the signal frequency (f) are analyzed. The role of the contact area is discussed. The contacts of Bi Sb with different materials are analyzed. The obtained results are compared to the literature data. Both DDs operating at the temperature of liquid nitrogen (T = 77.4 K) and liquid helium are considered. Comparison with existent literature data shows that the proposed DDs can be 10 100 times better. The physical reasons for these advantages are discussed. It is shown that the unique properties of Bi Sb alloys, particularly of a Bi0.88Sb0.12 alloy, make these alloys promising materials for cryoelectronicsCherner, IacovD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 13, Iss 3-4, Pp 222-228 (2014)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Cherner, Iacov Numerical modeling of detection in contacts of bismuth-antimony alloy with different materials: influence of contact area and material factor
description	Diode detectors (DDs) are widely used in electronic information and communication systems. In this paper, the numerical modeling of the electrical potential distribution and current passing in contacts of a normal metal or a superconductor with a bismuth-antimony (Bi Sb) semiconductor alloy is conducted. The possibilities of designing DDs based on these contacts to operate at the liquid helium temperature (T) of 4.2 K are explored. The dependences of current responsivity (CR), voltage responsivity (VR), and noise equivalent power (NEP) on the signal frequency (f) are analyzed. The role of the contact area is discussed. The contacts of Bi Sb with different materials are analyzed. The obtained results are compared to the literature data. Both DDs operating at the temperature of liquid nitrogen (T = 77.4 K) and liquid helium are considered. Comparison with existent literature data shows that the proposed DDs can be 10 100 times better. The physical reasons for these advantages are discussed. It is shown that the unique properties of Bi Sb alloys, particularly of a Bi0.88Sb0.12 alloy, make these alloys promising materials for cryoelectronics
format	article
author	Cherner, Iacov
author_facet	Cherner, Iacov
author_sort	Cherner, Iacov
title	Numerical modeling of detection in contacts of bismuth-antimony alloy with different materials: influence of contact area and material factor
title_short	Numerical modeling of detection in contacts of bismuth-antimony alloy with different materials: influence of contact area and material factor
title_full	Numerical modeling of detection in contacts of bismuth-antimony alloy with different materials: influence of contact area and material factor
title_fullStr	Numerical modeling of detection in contacts of bismuth-antimony alloy with different materials: influence of contact area and material factor
title_full_unstemmed	Numerical modeling of detection in contacts of bismuth-antimony alloy with different materials: influence of contact area and material factor
title_sort	numerical modeling of detection in contacts of bismuth-antimony alloy with different materials: influence of contact area and material factor
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2014
url	https://doaj.org/article/5654460679504e8e9e86d12f953863f8
work_keys_str_mv	AT cherneriacov numericalmodelingofdetectionincontactsofbismuthantimonyalloywithdifferentmaterialsinfluenceofcontactareaandmaterialfactor
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Numerical modeling of detection in contacts of bismuth-antimony alloy with different materials: influence of contact area and material factor

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