Time-Resolved and Temperature-Dependent Fractional Amplitude Contributions to the Broadband Emission of CdSe Quantum Dots

The broadband spontaneous emission of excitons in CdSe quantum dots (QDs) is of great interest for the spectral imaging of living organisms or specific substances in the visible spectral region as well as in the biological optical window near the infrared spectral region. Semiconductor QDs that are...

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Autores principales:	Quinton Rice, Sangram Raut, Kyle Burney, Zygmunt Gryczynski, Ignacy Gryczynski, William W. Yu, Bagher Tabibi, Jaetae Seo
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	quantum dots time-resolved spectroscopy Crystallography QD901-999
Acceso en línea:	https://doaj.org/article/568017f7fe5b45b582e435c6c8e3735b
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spelling	oai:doaj.org-article:568017f7fe5b45b582e435c6c8e3735b2021-11-25T17:17:40ZTime-Resolved and Temperature-Dependent Fractional Amplitude Contributions to the Broadband Emission of CdSe Quantum Dots10.3390/cryst111112842073-4352https://doaj.org/article/568017f7fe5b45b582e435c6c8e3735b2021-10-01T00:00:00Zhttps://www.mdpi.com/2073-4352/11/11/1284https://doaj.org/toc/2073-4352The broadband spontaneous emission of excitons in CdSe quantum dots (QDs) is of great interest for the spectral imaging of living organisms or specific substances in the visible spectral region as well as in the biological optical window near the infrared spectral region. Semiconductor QDs that are near the bulk Bohr radius exhibit wide spectral tunability and high color purity due to quantum confinement of excitons within the dot boundary. However, with reducing dot size, the role of the surface-trapped state increases. The temperature-dependent photoluminescence (PL) confirms this with a ~3:1 emission intensity decrease from the surface-trapped state compared to the band edge. Large crystal irregularity, dangling ions, and foreign molecules can introduce new electronic transitions from surface-trapped states that provide broad spontaneous emission in the spectral region from visible to near IR in addition to the band edge emission. The time-resolved PL analyzed the fractional contributions of band edge, surface-trapped states, and possible intermediate trapped states to the broad spectral emission in order to characterize the CdSe QDs.Quinton RiceSangram RautKyle BurneyZygmunt GryczynskiIgnacy GryczynskiWilliam W. YuBagher TabibiJaetae SeoMDPI AGarticlequantum dotstime-resolved spectroscopyCrystallographyQD901-999ENCrystals, Vol 11, Iss 1284, p 1284 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	quantum dots time-resolved spectroscopy Crystallography QD901-999
spellingShingle	quantum dots time-resolved spectroscopy Crystallography QD901-999 Quinton Rice Sangram Raut Kyle Burney Zygmunt Gryczynski Ignacy Gryczynski William W. Yu Bagher Tabibi Jaetae Seo Time-Resolved and Temperature-Dependent Fractional Amplitude Contributions to the Broadband Emission of CdSe Quantum Dots
description	The broadband spontaneous emission of excitons in CdSe quantum dots (QDs) is of great interest for the spectral imaging of living organisms or specific substances in the visible spectral region as well as in the biological optical window near the infrared spectral region. Semiconductor QDs that are near the bulk Bohr radius exhibit wide spectral tunability and high color purity due to quantum confinement of excitons within the dot boundary. However, with reducing dot size, the role of the surface-trapped state increases. The temperature-dependent photoluminescence (PL) confirms this with a ~3:1 emission intensity decrease from the surface-trapped state compared to the band edge. Large crystal irregularity, dangling ions, and foreign molecules can introduce new electronic transitions from surface-trapped states that provide broad spontaneous emission in the spectral region from visible to near IR in addition to the band edge emission. The time-resolved PL analyzed the fractional contributions of band edge, surface-trapped states, and possible intermediate trapped states to the broad spectral emission in order to characterize the CdSe QDs.
format	article
author	Quinton Rice Sangram Raut Kyle Burney Zygmunt Gryczynski Ignacy Gryczynski William W. Yu Bagher Tabibi Jaetae Seo
author_facet	Quinton Rice Sangram Raut Kyle Burney Zygmunt Gryczynski Ignacy Gryczynski William W. Yu Bagher Tabibi Jaetae Seo
author_sort	Quinton Rice
title	Time-Resolved and Temperature-Dependent Fractional Amplitude Contributions to the Broadband Emission of CdSe Quantum Dots
title_short	Time-Resolved and Temperature-Dependent Fractional Amplitude Contributions to the Broadband Emission of CdSe Quantum Dots
title_full	Time-Resolved and Temperature-Dependent Fractional Amplitude Contributions to the Broadband Emission of CdSe Quantum Dots
title_fullStr	Time-Resolved and Temperature-Dependent Fractional Amplitude Contributions to the Broadband Emission of CdSe Quantum Dots
title_full_unstemmed	Time-Resolved and Temperature-Dependent Fractional Amplitude Contributions to the Broadband Emission of CdSe Quantum Dots
title_sort	time-resolved and temperature-dependent fractional amplitude contributions to the broadband emission of cdse quantum dots
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/568017f7fe5b45b582e435c6c8e3735b
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Time-Resolved and Temperature-Dependent Fractional Amplitude Contributions to the Broadband Emission of CdSe Quantum Dots

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