A Broadband Gain Amplifier Designed with the Models for Package and Diode Using 0.5 μm GaAs E-pHEMT Process

This paper presents a 50 MHz to 5 GHz broadband gain amplifier using a 0.5 μm gallium-arsenide pseudomorphic high-electron-mobility-transistor (GaAs pHEMT). For broadband design, a high gain cascode structure with a feedback network was used. To ensure the robustness of the design, the amplifier had...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Min-Su Kim, Heesauk Jhon
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	medium power amplifier broadband gain amplifier GaAs E-pHEMT feedback network Darlington amplifier cascode structure Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/56999d71b5c941d0b359bbdacbe2e97e
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:56999d71b5c941d0b359bbdacbe2e97e
record_format	dspace
spelling	oai:doaj.org-article:56999d71b5c941d0b359bbdacbe2e97e2021-11-11T15:40:09ZA Broadband Gain Amplifier Designed with the Models for Package and Diode Using 0.5 μm GaAs E-pHEMT Process10.3390/electronics102126782079-9292https://doaj.org/article/56999d71b5c941d0b359bbdacbe2e97e2021-11-01T00:00:00Zhttps://www.mdpi.com/2079-9292/10/21/2678https://doaj.org/toc/2079-9292This paper presents a 50 MHz to 5 GHz broadband gain amplifier using a 0.5 μm gallium-arsenide pseudomorphic high-electron-mobility-transistor (GaAs pHEMT). For broadband design, a high gain cascode structure with a feedback network was used. To ensure the robustness of the design, the amplifier had to consider the effects of the Electrostatic Discharge (ESD)-protected diode and the package, which can degrade the broadband performance. Therefore, the equivalent circuit models of the package and the ESD-protected diode were analyzed and simulated in this paper. The designed broadband gain amplifier from 50 MHz to 5 GHz frequency band has a die size of 700 μm × 1000 μm and consumes 156 mW of dc power, and it was simulated with a gain of 18.7 dB to 20.6 dB, a P<sub>1</sub>dB of 15.3 to 16.9 dBm, and a OIP<sub>3</sub> of 26.5 to 31 dBm. Furthermore, the excellent gain flatness exhibited within 18.7 dB ± 1.92 dB at the interest of the frequency band.Min-Su KimHeesauk JhonMDPI AGarticlemedium power amplifierbroadband gain amplifierGaAs E-pHEMTfeedback networkDarlington amplifiercascode structureElectronicsTK7800-8360ENElectronics, Vol 10, Iss 2678, p 2678 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	medium power amplifier broadband gain amplifier GaAs E-pHEMT feedback network Darlington amplifier cascode structure Electronics TK7800-8360
spellingShingle	medium power amplifier broadband gain amplifier GaAs E-pHEMT feedback network Darlington amplifier cascode structure Electronics TK7800-8360 Min-Su Kim Heesauk Jhon A Broadband Gain Amplifier Designed with the Models for Package and Diode Using 0.5 μm GaAs E-pHEMT Process
description	This paper presents a 50 MHz to 5 GHz broadband gain amplifier using a 0.5 μm gallium-arsenide pseudomorphic high-electron-mobility-transistor (GaAs pHEMT). For broadband design, a high gain cascode structure with a feedback network was used. To ensure the robustness of the design, the amplifier had to consider the effects of the Electrostatic Discharge (ESD)-protected diode and the package, which can degrade the broadband performance. Therefore, the equivalent circuit models of the package and the ESD-protected diode were analyzed and simulated in this paper. The designed broadband gain amplifier from 50 MHz to 5 GHz frequency band has a die size of 700 μm × 1000 μm and consumes 156 mW of dc power, and it was simulated with a gain of 18.7 dB to 20.6 dB, a P<sub>1</sub>dB of 15.3 to 16.9 dBm, and a OIP<sub>3</sub> of 26.5 to 31 dBm. Furthermore, the excellent gain flatness exhibited within 18.7 dB ± 1.92 dB at the interest of the frequency band.
format	article
author	Min-Su Kim Heesauk Jhon
author_facet	Min-Su Kim Heesauk Jhon
author_sort	Min-Su Kim
title	A Broadband Gain Amplifier Designed with the Models for Package and Diode Using 0.5 μm GaAs E-pHEMT Process
title_short	A Broadband Gain Amplifier Designed with the Models for Package and Diode Using 0.5 μm GaAs E-pHEMT Process
title_full	A Broadband Gain Amplifier Designed with the Models for Package and Diode Using 0.5 μm GaAs E-pHEMT Process
title_fullStr	A Broadband Gain Amplifier Designed with the Models for Package and Diode Using 0.5 μm GaAs E-pHEMT Process
title_full_unstemmed	A Broadband Gain Amplifier Designed with the Models for Package and Diode Using 0.5 μm GaAs E-pHEMT Process
title_sort	broadband gain amplifier designed with the models for package and diode using 0.5 μm gaas e-phemt process
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/56999d71b5c941d0b359bbdacbe2e97e
work_keys_str_mv	AT minsukim abroadbandgainamplifierdesignedwiththemodelsforpackageanddiodeusing05mmgaasephemtprocess AT heesaukjhon abroadbandgainamplifierdesignedwiththemodelsforpackageanddiodeusing05mmgaasephemtprocess AT minsukim broadbandgainamplifierdesignedwiththemodelsforpackageanddiodeusing05mmgaasephemtprocess AT heesaukjhon broadbandgainamplifierdesignedwiththemodelsforpackageanddiodeusing05mmgaasephemtprocess
_version_	1718434534735740928

A Broadband Gain Amplifier Designed with the Models for Package and Diode Using 0.5 μm GaAs E-pHEMT Process

Ejemplares similares