Large-area epitaxial growth of curvature-stabilized ABC trilayer graphene

Large-area epitaxial growth of curvature-stabilized ABC trilayer graphene

The semiconducting ABC configuration of trilayer graphene is more challenging to grow on large scales than its semimetallic ABA counterpart. Here, an approach to trilayer growth via chemical vapor deposition is presented that utilizes substrate curvature to yield enhanced fraction and size of ABC do...

Full description

Saved in:
Bibliographic Details
Main Authors: Zhaoli Gao, Sheng Wang, Joel Berry, Qicheng Zhang, Julian Gebhardt, William M. Parkin, Jose Avila, Hemian Yi, Chaoyu Chen, Sebastian Hurtado-Parra, Marija Drndić, Andrew M. Rappe, David J. Srolovitz, James M. Kikkawa, Zhengtang Luo, Maria C. Asensio, Feng Wang, A. T. Charlie Johnson
Format: article
Language:EN
Published: Nature Portfolio 2020
Subjects:
Science
Q
Online Access:https://doaj.org/article/56c581fa05234c709cfe115631e4b2c2
Tags: Add Tag
No Tags, Be the first to tag this record!

Internet

https://doaj.org/article/56c581fa05234c709cfe115631e4b2c2

Similar Items