Atomic Layer Deposition of Ultrathin ZnO Films for Hybrid Window Layers for Cu(Inx,Ga1−x)Se2 Solar Cells

The efficiency of thin-film chalcogenide solar cells is dependent on their window layer thickness. However, the application of an ultrathin window layer is difficult because of the limited capability of the deposition process. This paper reports the use of atomic layer deposition (ALD) processes for...

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Autores principales:	Jaebaek Lee, Dong-Hwan Jeon, Dae-Kue Hwang, Kee-Jeong Yang, Jin-Kyu Kang, Shi-Joon Sung, Hyunwoong Park, Dae-Hwan Kim
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	ZnO atomic layer deposition ultrathin window layer CIGS solar cells Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/56f9d62b23b94b9a98f11815770416ad
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spelling	oai:doaj.org-article:56f9d62b23b94b9a98f11815770416ad2021-11-25T18:29:45ZAtomic Layer Deposition of Ultrathin ZnO Films for Hybrid Window Layers for Cu(In<sub>x</sub>,Ga<sub>1−x</sub>)Se<sub>2</sub> Solar Cells10.3390/nano111127792079-4991https://doaj.org/article/56f9d62b23b94b9a98f11815770416ad2021-10-01T00:00:00Zhttps://www.mdpi.com/2079-4991/11/11/2779https://doaj.org/toc/2079-4991The efficiency of thin-film chalcogenide solar cells is dependent on their window layer thickness. However, the application of an ultrathin window layer is difficult because of the limited capability of the deposition process. This paper reports the use of atomic layer deposition (ALD) processes for fabrication of thin window layers for Cu(In<sub>x</sub>,Ga<sub>1−x</sub>)Se<sub>2</sub> (CIGS) thin-film solar cells, replacing conventional sputtering techniques. We fabricated a viable ultrathin 12 nm window layer on a CdS buffer layer from the uniform conformal coating provided by ALD. CIGS solar cells with an ALD ZnO window layer exhibited superior photovoltaic performances to those of cells with a sputtered intrinsic ZnO (i-ZnO) window layer. The short-circuit current of the former solar cells improved with the reduction in light loss caused by using a thinner ZnO window layer with a wider band gap. Ultrathin uniform A-ZnO window layers also proved more effective than sputtered i-ZnO layers at improving the open-circuit voltage of the CIGS solar cells, because of the additional buffering effect caused by their semiconducting nature. In addition, because of the precise control of the material structure provided by ALD, CIGS solar cells with A-ZnO window layers exhibited a narrow deviation of photovoltaic properties, advantageous for large-scale mass production purposes.Jaebaek LeeDong-Hwan JeonDae-Kue HwangKee-Jeong YangJin-Kyu KangShi-Joon SungHyunwoong ParkDae-Hwan KimMDPI AGarticleZnOatomic layer depositionultrathinwindow layerCIGSsolar cellsChemistryQD1-999ENNanomaterials, Vol 11, Iss 2779, p 2779 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	ZnO atomic layer deposition ultrathin window layer CIGS solar cells Chemistry QD1-999
spellingShingle	ZnO atomic layer deposition ultrathin window layer CIGS solar cells Chemistry QD1-999 Jaebaek Lee Dong-Hwan Jeon Dae-Kue Hwang Kee-Jeong Yang Jin-Kyu Kang Shi-Joon Sung Hyunwoong Park Dae-Hwan Kim Atomic Layer Deposition of Ultrathin ZnO Films for Hybrid Window Layers for Cu(In<sub>x</sub>,Ga<sub>1−x</sub>)Se<sub>2</sub> Solar Cells
description	The efficiency of thin-film chalcogenide solar cells is dependent on their window layer thickness. However, the application of an ultrathin window layer is difficult because of the limited capability of the deposition process. This paper reports the use of atomic layer deposition (ALD) processes for fabrication of thin window layers for Cu(In<sub>x</sub>,Ga<sub>1−x</sub>)Se<sub>2</sub> (CIGS) thin-film solar cells, replacing conventional sputtering techniques. We fabricated a viable ultrathin 12 nm window layer on a CdS buffer layer from the uniform conformal coating provided by ALD. CIGS solar cells with an ALD ZnO window layer exhibited superior photovoltaic performances to those of cells with a sputtered intrinsic ZnO (i-ZnO) window layer. The short-circuit current of the former solar cells improved with the reduction in light loss caused by using a thinner ZnO window layer with a wider band gap. Ultrathin uniform A-ZnO window layers also proved more effective than sputtered i-ZnO layers at improving the open-circuit voltage of the CIGS solar cells, because of the additional buffering effect caused by their semiconducting nature. In addition, because of the precise control of the material structure provided by ALD, CIGS solar cells with A-ZnO window layers exhibited a narrow deviation of photovoltaic properties, advantageous for large-scale mass production purposes.
format	article
author	Jaebaek Lee Dong-Hwan Jeon Dae-Kue Hwang Kee-Jeong Yang Jin-Kyu Kang Shi-Joon Sung Hyunwoong Park Dae-Hwan Kim
author_facet	Jaebaek Lee Dong-Hwan Jeon Dae-Kue Hwang Kee-Jeong Yang Jin-Kyu Kang Shi-Joon Sung Hyunwoong Park Dae-Hwan Kim
author_sort	Jaebaek Lee
title	Atomic Layer Deposition of Ultrathin ZnO Films for Hybrid Window Layers for Cu(In<sub>x</sub>,Ga<sub>1−x</sub>)Se<sub>2</sub> Solar Cells
title_short	Atomic Layer Deposition of Ultrathin ZnO Films for Hybrid Window Layers for Cu(In<sub>x</sub>,Ga<sub>1−x</sub>)Se<sub>2</sub> Solar Cells
title_full	Atomic Layer Deposition of Ultrathin ZnO Films for Hybrid Window Layers for Cu(In<sub>x</sub>,Ga<sub>1−x</sub>)Se<sub>2</sub> Solar Cells
title_fullStr	Atomic Layer Deposition of Ultrathin ZnO Films for Hybrid Window Layers for Cu(In<sub>x</sub>,Ga<sub>1−x</sub>)Se<sub>2</sub> Solar Cells
title_full_unstemmed	Atomic Layer Deposition of Ultrathin ZnO Films for Hybrid Window Layers for Cu(In<sub>x</sub>,Ga<sub>1−x</sub>)Se<sub>2</sub> Solar Cells
title_sort	atomic layer deposition of ultrathin zno films for hybrid window layers for cu(in<sub>x</sub>,ga<sub>1−x</sub>)se<sub>2</sub> solar cells
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/56f9d62b23b94b9a98f11815770416ad
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_version_	1718411075349643264

Atomic Layer Deposition of Ultrathin ZnO Films for Hybrid Window Layers for Cu(In<sub>x</sub>,Ga<sub>1−x</sub>)Se<sub>2</sub> Solar Cells

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