Crossover point of the field effect transistor and interconnect applications in turbostratic multilayer graphene nanoribbon channel

Abstract The electrical transport properties of a turbostratic multilayer graphene nanoribbon (GNR) with various number of layers (1–8 layers) were investigated using a field effect transistor with a single GNR channel. In the turbostratic multilayer GNR with 5 layers or less, the carrier mobility a...

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Autores principales:	Ryota Negishi, Katsuma Yamamoto, Hirofumi Tanaka, Seyed Ali Mojtahedzadeh, Nobuya Mori, Yoshihiro Kobayashi
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/573b88a41ab4488a8ab5342645f4bbaf
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spelling	oai:doaj.org-article:573b88a41ab4488a8ab5342645f4bbaf2021-12-02T17:15:28ZCrossover point of the field effect transistor and interconnect applications in turbostratic multilayer graphene nanoribbon channel10.1038/s41598-021-89709-z2045-2322https://doaj.org/article/573b88a41ab4488a8ab5342645f4bbaf2021-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-89709-zhttps://doaj.org/toc/2045-2322Abstract The electrical transport properties of a turbostratic multilayer graphene nanoribbon (GNR) with various number of layers (1–8 layers) were investigated using a field effect transistor with a single GNR channel. In the turbostratic multilayer GNR with 5 layers or less, the carrier mobility and Ion/Ioff ratio in the FETs were improved by slightly increasing the conductance with increasing the number of layers, meaning that the excellent semiconducting characteristic. The improvement of the carrier transport properties promotes by the turbostratic stacking structure. In the turbostratic multilayer GNR with 6 layers or more, although the Ion/Ioff ratio degraded, the conductance extremely improved with increasing the number of layers. This indicates that the turbostratic multilayer GNR with thicker number of layers becomes the significantly lower resistivity wire as a metallic characteristic. We revealed that the crossover point of the physical properties between the semiconducting and metallic characteristics is determined by the strength to screen the surrounding environment effects such as charged impurity on the substrate. Our comprehensive investigation provides a design guidance for the various electrical device applications of GNR materials.Ryota NegishiKatsuma YamamotoHirofumi TanakaSeyed Ali MojtahedzadehNobuya MoriYoshihiro KobayashiNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-12 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Ryota Negishi Katsuma Yamamoto Hirofumi Tanaka Seyed Ali Mojtahedzadeh Nobuya Mori Yoshihiro Kobayashi Crossover point of the field effect transistor and interconnect applications in turbostratic multilayer graphene nanoribbon channel
description	Abstract The electrical transport properties of a turbostratic multilayer graphene nanoribbon (GNR) with various number of layers (1–8 layers) were investigated using a field effect transistor with a single GNR channel. In the turbostratic multilayer GNR with 5 layers or less, the carrier mobility and Ion/Ioff ratio in the FETs were improved by slightly increasing the conductance with increasing the number of layers, meaning that the excellent semiconducting characteristic. The improvement of the carrier transport properties promotes by the turbostratic stacking structure. In the turbostratic multilayer GNR with 6 layers or more, although the Ion/Ioff ratio degraded, the conductance extremely improved with increasing the number of layers. This indicates that the turbostratic multilayer GNR with thicker number of layers becomes the significantly lower resistivity wire as a metallic characteristic. We revealed that the crossover point of the physical properties between the semiconducting and metallic characteristics is determined by the strength to screen the surrounding environment effects such as charged impurity on the substrate. Our comprehensive investigation provides a design guidance for the various electrical device applications of GNR materials.
format	article
author	Ryota Negishi Katsuma Yamamoto Hirofumi Tanaka Seyed Ali Mojtahedzadeh Nobuya Mori Yoshihiro Kobayashi
author_facet	Ryota Negishi Katsuma Yamamoto Hirofumi Tanaka Seyed Ali Mojtahedzadeh Nobuya Mori Yoshihiro Kobayashi
author_sort	Ryota Negishi
title	Crossover point of the field effect transistor and interconnect applications in turbostratic multilayer graphene nanoribbon channel
title_short	Crossover point of the field effect transistor and interconnect applications in turbostratic multilayer graphene nanoribbon channel
title_full	Crossover point of the field effect transistor and interconnect applications in turbostratic multilayer graphene nanoribbon channel
title_fullStr	Crossover point of the field effect transistor and interconnect applications in turbostratic multilayer graphene nanoribbon channel
title_full_unstemmed	Crossover point of the field effect transistor and interconnect applications in turbostratic multilayer graphene nanoribbon channel
title_sort	crossover point of the field effect transistor and interconnect applications in turbostratic multilayer graphene nanoribbon channel
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/573b88a41ab4488a8ab5342645f4bbaf
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Crossover point of the field effect transistor and interconnect applications in turbostratic multilayer graphene nanoribbon channel

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