The Study of Optical and Electrical Properties of Nanostructured Silicon Carbide Thin Films Grown by Pulsed-Laser Deposition

In this paper, nanostructured silicon carbide (SiC) thin films are deposited onto glass substrate using pulsed laser deposition technique. Electrical and optical characterizations such as conductivity, resistivity, transmission, Seeback effect, absorption, absorption coefficient, energy band gap, a...

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Autores principales:	Mohammed F. Mohammed Sabri, Muhanad A. Ahmed, Wathiq R. Abed
Formato:	article
Lenguaje:	EN
Publicado:	Koya University 2021
Materias:	Nanostructure Pulsed laser deposition Silicon carbide Thin film Agriculture S Technology T Science Q
Acceso en línea:	https://doaj.org/article/57a2df09a8c746cab49cf13611310542
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spelling	oai:doaj.org-article:57a2df09a8c746cab49cf136113105422021-11-11T02:02:22ZThe Study of Optical and Electrical Properties of Nanostructured Silicon Carbide Thin Films Grown by Pulsed-Laser Deposition10.14500/aro.108522410-93552307-549Xhttps://doaj.org/article/57a2df09a8c746cab49cf136113105422021-11-01T00:00:00Zhttps://aro.koyauniversity.org/index.php/aro/article/view/852https://doaj.org/toc/2410-9355https://doaj.org/toc/2307-549X In this paper, nanostructured silicon carbide (SiC) thin films are deposited onto glass substrate using pulsed laser deposition technique. Electrical and optical characterizations such as conductivity, resistivity, transmission, Seeback effect, absorption, absorption coefficient, energy band gap, and extinction coefficient as a function of photon energy, and the effect of thin films thickness on transmission are carried out to characterize the prepared samples. Results showed that the prepared SiC thin film is an n-type semiconductor with an indirect bandgap of ~3 eV, 448 nm cutoff wavelength, 3.4395 × 104 cm−1 absorption coefficient and 0.154 extinction coefficient. The surface morphology of the SiC thin films is studied using scanning electron microscope at a substrate temperature of 400 °C and it is found that the grain size of the prepared SiC thin film is about 30 nm. As such, the nano thin films optical and structural characteristics enable the films to be used as gases sensors in many optoelectronic devices such as the environment and ultraviolet photodiode. Mohammed F. Mohammed SabriMuhanad A. AhmedWathiq R. AbedKoya UniversityarticleNanostructurePulsed laser depositionSilicon carbideThin filmAgricultureSTechnologyTScienceQENARO-The Scientific Journal of Koya University, Vol 9, Iss 2 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Nanostructure Pulsed laser deposition Silicon carbide Thin film Agriculture S Technology T Science Q
spellingShingle	Nanostructure Pulsed laser deposition Silicon carbide Thin film Agriculture S Technology T Science Q Mohammed F. Mohammed Sabri Muhanad A. Ahmed Wathiq R. Abed The Study of Optical and Electrical Properties of Nanostructured Silicon Carbide Thin Films Grown by Pulsed-Laser Deposition
description	In this paper, nanostructured silicon carbide (SiC) thin films are deposited onto glass substrate using pulsed laser deposition technique. Electrical and optical characterizations such as conductivity, resistivity, transmission, Seeback effect, absorption, absorption coefficient, energy band gap, and extinction coefficient as a function of photon energy, and the effect of thin films thickness on transmission are carried out to characterize the prepared samples. Results showed that the prepared SiC thin film is an n-type semiconductor with an indirect bandgap of ~3 eV, 448 nm cutoff wavelength, 3.4395 × 104 cm−1 absorption coefficient and 0.154 extinction coefficient. The surface morphology of the SiC thin films is studied using scanning electron microscope at a substrate temperature of 400 °C and it is found that the grain size of the prepared SiC thin film is about 30 nm. As such, the nano thin films optical and structural characteristics enable the films to be used as gases sensors in many optoelectronic devices such as the environment and ultraviolet photodiode.
format	article
author	Mohammed F. Mohammed Sabri Muhanad A. Ahmed Wathiq R. Abed
author_facet	Mohammed F. Mohammed Sabri Muhanad A. Ahmed Wathiq R. Abed
author_sort	Mohammed F. Mohammed Sabri
title	The Study of Optical and Electrical Properties of Nanostructured Silicon Carbide Thin Films Grown by Pulsed-Laser Deposition
title_short	The Study of Optical and Electrical Properties of Nanostructured Silicon Carbide Thin Films Grown by Pulsed-Laser Deposition
title_full	The Study of Optical and Electrical Properties of Nanostructured Silicon Carbide Thin Films Grown by Pulsed-Laser Deposition
title_fullStr	The Study of Optical and Electrical Properties of Nanostructured Silicon Carbide Thin Films Grown by Pulsed-Laser Deposition
title_full_unstemmed	The Study of Optical and Electrical Properties of Nanostructured Silicon Carbide Thin Films Grown by Pulsed-Laser Deposition
title_sort	study of optical and electrical properties of nanostructured silicon carbide thin films grown by pulsed-laser deposition
publisher	Koya University
publishDate	2021
url	https://doaj.org/article/57a2df09a8c746cab49cf13611310542
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The Study of Optical and Electrical Properties of Nanostructured Silicon Carbide Thin Films Grown by Pulsed-Laser Deposition

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