Multiferroicity in atomic van der Waals heterostructures

Low dimensional multiferroic materials promise the technological advances in next generation spintronic and microwave magnetoelectric devices. Here the authors propose the multiferroicity in the atomically thin ferromagnetic Cr2Ge2Te6/ferroelectric In2Se3 van der Waals heterostructure due to the cro...

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Autores principales: Cheng Gong, Eun Mi Kim, Yuan Wang, Geunsik Lee, Xiang Zhang
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2019
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Acceso en línea:https://doaj.org/article/57b3a29743ed4e40a7bbb4b041910b52
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Sumario:Low dimensional multiferroic materials promise the technological advances in next generation spintronic and microwave magnetoelectric devices. Here the authors propose the multiferroicity in the atomically thin ferromagnetic Cr2Ge2Te6/ferroelectric In2Se3 van der Waals heterostructure due to the crosslayer magnetoelectric coupling.