Tin dioxide based thin film gas sensor of hydrogen
Results of investigation of the SnO2 thin films sensitivity towards to hydrogen are presented. Films were deposited by chemical spray pyrolysis method on ceramic substrate. Study of electrical characteristics of obtained layers has shown that the latter possess resi...
Guardado en:
Autor principal: | |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2005
|
Materias: | |
Acceso en línea: | https://doaj.org/article/57baabddc6f64cc186e48e7f8846ee4c |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
id |
oai:doaj.org-article:57baabddc6f64cc186e48e7f8846ee4c |
---|---|
record_format |
dspace |
spelling |
oai:doaj.org-article:57baabddc6f64cc186e48e7f8846ee4c2021-11-21T12:13:27ZTin dioxide based thin film gas sensor of hydrogen2537-63651810-648Xhttps://doaj.org/article/57baabddc6f64cc186e48e7f8846ee4c2005-01-01T00:00:00Zhttps://mjps.nanotech.md/archive/2005/article/3064https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Results of investigation of the SnO2 thin films sensitivity towards to hydrogen are presented. Films were deposited by chemical spray pyrolysis method on ceramic substrate. Study of electrical characteristics of obtained layers has shown that the latter possess resistance on the level 105 -106 Ohm at the working temperatures 200-250 o C. Gas sensitivity S of deposited thin films amounted 95-100 relative units to 0.1 vol.% of hydrogen in air. Optimization of gas sensitive properties of tin dioxide films through bulk and surface doping with Pd and Cu has allowed increasing of hydrogen sensitivity up to 103 rel. units. Simultaneously, the considerable shift of the working temperatures of such sensor to the low temperature value (150o C) was achieved. Dmitriev, SergheiD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 4, Iss 1, Pp 86-89 (2005) |
institution |
DOAJ |
collection |
DOAJ |
language |
EN |
topic |
Physics QC1-999 Electronics TK7800-8360 |
spellingShingle |
Physics QC1-999 Electronics TK7800-8360 Dmitriev, Serghei Tin dioxide based thin film gas sensor of hydrogen |
description |
Results of investigation of the SnO2 thin films sensitivity towards to hydrogen are
presented. Films were deposited by chemical spray pyrolysis method on ceramic substrate.
Study of electrical characteristics of obtained layers has shown that the latter possess
resistance on the level 105
-106 Ohm at the working temperatures 200-250 o
C.
Gas sensitivity S of deposited thin films amounted 95-100 relative units to 0.1 vol.% of
hydrogen in air. Optimization of gas sensitive properties of tin dioxide films through bulk and
surface doping with Pd and Cu has allowed increasing of hydrogen sensitivity up to 103
rel.
units. Simultaneously, the considerable shift of the working temperatures of such sensor to the
low temperature value (150o
C) was achieved. |
format |
article |
author |
Dmitriev, Serghei |
author_facet |
Dmitriev, Serghei |
author_sort |
Dmitriev, Serghei |
title |
Tin dioxide based thin film gas sensor of hydrogen |
title_short |
Tin dioxide based thin film gas sensor of hydrogen |
title_full |
Tin dioxide based thin film gas sensor of hydrogen |
title_fullStr |
Tin dioxide based thin film gas sensor of hydrogen |
title_full_unstemmed |
Tin dioxide based thin film gas sensor of hydrogen |
title_sort |
tin dioxide based thin film gas sensor of hydrogen |
publisher |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies |
publishDate |
2005 |
url |
https://doaj.org/article/57baabddc6f64cc186e48e7f8846ee4c |
work_keys_str_mv |
AT dmitrievserghei tindioxidebasedthinfilmgassensorofhydrogen |
_version_ |
1718419123977846784 |