Tin dioxide based thin film gas sensor of hydrogen

Results of investigation of the SnO2 thin films sensitivity towards to hydrogen are presented. Films were deposited by chemical spray pyrolysis method on ceramic substrate. Study of electrical characteristics of obtained layers has shown that the latter possess resi...

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Autor principal: Dmitriev, Serghei
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Lenguaje:EN
Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2005
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Acceso en línea:https://doaj.org/article/57baabddc6f64cc186e48e7f8846ee4c
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spelling oai:doaj.org-article:57baabddc6f64cc186e48e7f8846ee4c2021-11-21T12:13:27ZTin dioxide based thin film gas sensor of hydrogen2537-63651810-648Xhttps://doaj.org/article/57baabddc6f64cc186e48e7f8846ee4c2005-01-01T00:00:00Zhttps://mjps.nanotech.md/archive/2005/article/3064https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Results of investigation of the SnO2 thin films sensitivity towards to hydrogen are presented. Films were deposited by chemical spray pyrolysis method on ceramic substrate. Study of electrical characteristics of obtained layers has shown that the latter possess resistance on the level 105 -106 Ohm at the working temperatures 200-250 o C. Gas sensitivity S of deposited thin films amounted 95-100 relative units to 0.1 vol.% of hydrogen in air. Optimization of gas sensitive properties of tin dioxide films through bulk and surface doping with Pd and Cu has allowed increasing of hydrogen sensitivity up to 103 rel. units. Simultaneously, the considerable shift of the working temperatures of such sensor to the low temperature value (150o C) was achieved. Dmitriev, SergheiD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 4, Iss 1, Pp 86-89 (2005)
institution DOAJ
collection DOAJ
language EN
topic Physics
QC1-999
Electronics
TK7800-8360
spellingShingle Physics
QC1-999
Electronics
TK7800-8360
Dmitriev, Serghei
Tin dioxide based thin film gas sensor of hydrogen
description Results of investigation of the SnO2 thin films sensitivity towards to hydrogen are presented. Films were deposited by chemical spray pyrolysis method on ceramic substrate. Study of electrical characteristics of obtained layers has shown that the latter possess resistance on the level 105 -106 Ohm at the working temperatures 200-250 o C. Gas sensitivity S of deposited thin films amounted 95-100 relative units to 0.1 vol.% of hydrogen in air. Optimization of gas sensitive properties of tin dioxide films through bulk and surface doping with Pd and Cu has allowed increasing of hydrogen sensitivity up to 103 rel. units. Simultaneously, the considerable shift of the working temperatures of such sensor to the low temperature value (150o C) was achieved.
format article
author Dmitriev, Serghei
author_facet Dmitriev, Serghei
author_sort Dmitriev, Serghei
title Tin dioxide based thin film gas sensor of hydrogen
title_short Tin dioxide based thin film gas sensor of hydrogen
title_full Tin dioxide based thin film gas sensor of hydrogen
title_fullStr Tin dioxide based thin film gas sensor of hydrogen
title_full_unstemmed Tin dioxide based thin film gas sensor of hydrogen
title_sort tin dioxide based thin film gas sensor of hydrogen
publisher D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate 2005
url https://doaj.org/article/57baabddc6f64cc186e48e7f8846ee4c
work_keys_str_mv AT dmitrievserghei tindioxidebasedthinfilmgassensorofhydrogen
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