Two-photon photocurrent in InGaN/GaN nanowire intermediate band solar cells
Intermediate band solar cells have the ability to reach efficiencies similar to multijunction cells using a single semiconductor junction. Here, enhanced two-photon carrier generation is demonstrated on a silicon substrate in an InGaN/GaN quantum dot-in-nanowire heterostructure intermediate band sol...
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| Autores principales: | , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2020
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/57cee3b6adc849a1a18136b880823397 |
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| Sumario: | Intermediate band solar cells have the ability to reach efficiencies similar to multijunction cells using a single semiconductor junction. Here, enhanced two-photon carrier generation is demonstrated on a silicon substrate in an InGaN/GaN quantum dot-in-nanowire heterostructure intermediate band solar cell. |
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