Two-photon photocurrent in InGaN/GaN nanowire intermediate band solar cells

Intermediate band solar cells have the ability to reach efficiencies similar to multijunction cells using a single semiconductor junction. Here, enhanced two-photon carrier generation is demonstrated on a silicon substrate in an InGaN/GaN quantum dot-in-nanowire heterostructure intermediate band sol...

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Autores principales:	Ross Cheriton, Sharif M. Sadaf, Luc Robichaud, Jacob J. Krich, Zetian Mi, Karin Hinzer
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492
Acceso en línea:	https://doaj.org/article/57cee3b6adc849a1a18136b880823397
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spelling	oai:doaj.org-article:57cee3b6adc849a1a18136b8808233972021-12-02T15:09:15ZTwo-photon photocurrent in InGaN/GaN nanowire intermediate band solar cells10.1038/s43246-020-00054-62662-4443https://doaj.org/article/57cee3b6adc849a1a18136b8808233972020-08-01T00:00:00Zhttps://doi.org/10.1038/s43246-020-00054-6https://doaj.org/toc/2662-4443Intermediate band solar cells have the ability to reach efficiencies similar to multijunction cells using a single semiconductor junction. Here, enhanced two-photon carrier generation is demonstrated on a silicon substrate in an InGaN/GaN quantum dot-in-nanowire heterostructure intermediate band solar cell.Ross CheritonSharif M. SadafLuc RobichaudJacob J. KrichZetian MiKarin HinzerNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ENCommunications Materials, Vol 1, Iss 1, Pp 1-7 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Ross Cheriton Sharif M. Sadaf Luc Robichaud Jacob J. Krich Zetian Mi Karin Hinzer Two-photon photocurrent in InGaN/GaN nanowire intermediate band solar cells
description	Intermediate band solar cells have the ability to reach efficiencies similar to multijunction cells using a single semiconductor junction. Here, enhanced two-photon carrier generation is demonstrated on a silicon substrate in an InGaN/GaN quantum dot-in-nanowire heterostructure intermediate band solar cell.
format	article
author	Ross Cheriton Sharif M. Sadaf Luc Robichaud Jacob J. Krich Zetian Mi Karin Hinzer
author_facet	Ross Cheriton Sharif M. Sadaf Luc Robichaud Jacob J. Krich Zetian Mi Karin Hinzer
author_sort	Ross Cheriton
title	Two-photon photocurrent in InGaN/GaN nanowire intermediate band solar cells
title_short	Two-photon photocurrent in InGaN/GaN nanowire intermediate band solar cells
title_full	Two-photon photocurrent in InGaN/GaN nanowire intermediate band solar cells
title_fullStr	Two-photon photocurrent in InGaN/GaN nanowire intermediate band solar cells
title_full_unstemmed	Two-photon photocurrent in InGaN/GaN nanowire intermediate band solar cells
title_sort	two-photon photocurrent in ingan/gan nanowire intermediate band solar cells
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/57cee3b6adc849a1a18136b880823397
work_keys_str_mv	AT rosscheriton twophotonphotocurrentiningangannanowireintermediatebandsolarcells AT sharifmsadaf twophotonphotocurrentiningangannanowireintermediatebandsolarcells AT lucrobichaud twophotonphotocurrentiningangannanowireintermediatebandsolarcells AT jacobjkrich twophotonphotocurrentiningangannanowireintermediatebandsolarcells AT zetianmi twophotonphotocurrentiningangannanowireintermediatebandsolarcells AT karinhinzer twophotonphotocurrentiningangannanowireintermediatebandsolarcells
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Two-photon photocurrent in InGaN/GaN nanowire intermediate band solar cells

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