Inscribing diffraction grating inside silicon substrate using a subnanosecond laser in one photon absorption wavelength
Abstract Using focused subnanosecond laser pulses at $$1.064\,\upmu \hbox {m}$$ 1.064 μ m wavelength, modification of silicon into opaque state was induced. While silicon exhibits one-photon absorption at this wavelength, the modification was induced inside $$300\,\upmu \hbox {m}$$ 300 μ m -thick si...
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Nature Portfolio
2020
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oai:doaj.org-article:57fc66334f8140fd9bb6d97ac18754172021-12-02T16:18:03ZInscribing diffraction grating inside silicon substrate using a subnanosecond laser in one photon absorption wavelength10.1038/s41598-020-78564-z2045-2322https://doaj.org/article/57fc66334f8140fd9bb6d97ac18754172020-12-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-78564-zhttps://doaj.org/toc/2045-2322Abstract Using focused subnanosecond laser pulses at $$1.064\,\upmu \hbox {m}$$ 1.064 μ m wavelength, modification of silicon into opaque state was induced. While silicon exhibits one-photon absorption at this wavelength, the modification was induced inside $$300\,\upmu \hbox {m}$$ 300 μ m -thick silicon substrate without damaging top or bottom surfaces. The depth range of the focus position was investigated where inside of the substrate can be modified without damaging the surfaces. Using this technique, diffraction gratings were inscribed inside silicon substrate. Diffraction from the gratings were observed, and the diffraction angle well agreed with the theoretical value. These results demonstrate that this technique could be used for fabricating infrared optical elements in silicon.Kozo SugimotoShigeki MatsuoYoshiki NaoiNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 10, Iss 1, Pp 1-7 (2020) |
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Medicine R Science Q Kozo Sugimoto Shigeki Matsuo Yoshiki Naoi Inscribing diffraction grating inside silicon substrate using a subnanosecond laser in one photon absorption wavelength |
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Abstract Using focused subnanosecond laser pulses at $$1.064\,\upmu \hbox {m}$$ 1.064 μ m wavelength, modification of silicon into opaque state was induced. While silicon exhibits one-photon absorption at this wavelength, the modification was induced inside $$300\,\upmu \hbox {m}$$ 300 μ m -thick silicon substrate without damaging top or bottom surfaces. The depth range of the focus position was investigated where inside of the substrate can be modified without damaging the surfaces. Using this technique, diffraction gratings were inscribed inside silicon substrate. Diffraction from the gratings were observed, and the diffraction angle well agreed with the theoretical value. These results demonstrate that this technique could be used for fabricating infrared optical elements in silicon. |
format |
article |
author |
Kozo Sugimoto Shigeki Matsuo Yoshiki Naoi |
author_facet |
Kozo Sugimoto Shigeki Matsuo Yoshiki Naoi |
author_sort |
Kozo Sugimoto |
title |
Inscribing diffraction grating inside silicon substrate using a subnanosecond laser in one photon absorption wavelength |
title_short |
Inscribing diffraction grating inside silicon substrate using a subnanosecond laser in one photon absorption wavelength |
title_full |
Inscribing diffraction grating inside silicon substrate using a subnanosecond laser in one photon absorption wavelength |
title_fullStr |
Inscribing diffraction grating inside silicon substrate using a subnanosecond laser in one photon absorption wavelength |
title_full_unstemmed |
Inscribing diffraction grating inside silicon substrate using a subnanosecond laser in one photon absorption wavelength |
title_sort |
inscribing diffraction grating inside silicon substrate using a subnanosecond laser in one photon absorption wavelength |
publisher |
Nature Portfolio |
publishDate |
2020 |
url |
https://doaj.org/article/57fc66334f8140fd9bb6d97ac1875417 |
work_keys_str_mv |
AT kozosugimoto inscribingdiffractiongratinginsidesiliconsubstrateusingasubnanosecondlaserinonephotonabsorptionwavelength AT shigekimatsuo inscribingdiffractiongratinginsidesiliconsubstrateusingasubnanosecondlaserinonephotonabsorptionwavelength AT yoshikinaoi inscribingdiffractiongratinginsidesiliconsubstrateusingasubnanosecondlaserinonephotonabsorptionwavelength |
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1718384231906803712 |