Inscribing diffraction grating inside silicon substrate using a subnanosecond laser in one photon absorption wavelength

Abstract Using focused subnanosecond laser pulses at $$1.064\,\upmu \hbox {m}$$ 1.064 μ m wavelength, modification of silicon into opaque state was induced. While silicon exhibits one-photon absorption at this wavelength, the modification was induced inside $$300\,\upmu \hbox {m}$$ 300 μ m -thick si...

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Autores principales: Kozo Sugimoto, Shigeki Matsuo, Yoshiki Naoi
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Lenguaje:EN
Publicado: Nature Portfolio 2020
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Acceso en línea:https://doaj.org/article/57fc66334f8140fd9bb6d97ac1875417
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spelling oai:doaj.org-article:57fc66334f8140fd9bb6d97ac18754172021-12-02T16:18:03ZInscribing diffraction grating inside silicon substrate using a subnanosecond laser in one photon absorption wavelength10.1038/s41598-020-78564-z2045-2322https://doaj.org/article/57fc66334f8140fd9bb6d97ac18754172020-12-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-78564-zhttps://doaj.org/toc/2045-2322Abstract Using focused subnanosecond laser pulses at $$1.064\,\upmu \hbox {m}$$ 1.064 μ m wavelength, modification of silicon into opaque state was induced. While silicon exhibits one-photon absorption at this wavelength, the modification was induced inside $$300\,\upmu \hbox {m}$$ 300 μ m -thick silicon substrate without damaging top or bottom surfaces. The depth range of the focus position was investigated where inside of the substrate can be modified without damaging the surfaces. Using this technique, diffraction gratings were inscribed inside silicon substrate. Diffraction from the gratings were observed, and the diffraction angle well agreed with the theoretical value. These results demonstrate that this technique could be used for fabricating infrared optical elements in silicon.Kozo SugimotoShigeki MatsuoYoshiki NaoiNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 10, Iss 1, Pp 1-7 (2020)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Kozo Sugimoto
Shigeki Matsuo
Yoshiki Naoi
Inscribing diffraction grating inside silicon substrate using a subnanosecond laser in one photon absorption wavelength
description Abstract Using focused subnanosecond laser pulses at $$1.064\,\upmu \hbox {m}$$ 1.064 μ m wavelength, modification of silicon into opaque state was induced. While silicon exhibits one-photon absorption at this wavelength, the modification was induced inside $$300\,\upmu \hbox {m}$$ 300 μ m -thick silicon substrate without damaging top or bottom surfaces. The depth range of the focus position was investigated where inside of the substrate can be modified without damaging the surfaces. Using this technique, diffraction gratings were inscribed inside silicon substrate. Diffraction from the gratings were observed, and the diffraction angle well agreed with the theoretical value. These results demonstrate that this technique could be used for fabricating infrared optical elements in silicon.
format article
author Kozo Sugimoto
Shigeki Matsuo
Yoshiki Naoi
author_facet Kozo Sugimoto
Shigeki Matsuo
Yoshiki Naoi
author_sort Kozo Sugimoto
title Inscribing diffraction grating inside silicon substrate using a subnanosecond laser in one photon absorption wavelength
title_short Inscribing diffraction grating inside silicon substrate using a subnanosecond laser in one photon absorption wavelength
title_full Inscribing diffraction grating inside silicon substrate using a subnanosecond laser in one photon absorption wavelength
title_fullStr Inscribing diffraction grating inside silicon substrate using a subnanosecond laser in one photon absorption wavelength
title_full_unstemmed Inscribing diffraction grating inside silicon substrate using a subnanosecond laser in one photon absorption wavelength
title_sort inscribing diffraction grating inside silicon substrate using a subnanosecond laser in one photon absorption wavelength
publisher Nature Portfolio
publishDate 2020
url https://doaj.org/article/57fc66334f8140fd9bb6d97ac1875417
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AT shigekimatsuo inscribingdiffractiongratinginsidesiliconsubstrateusingasubnanosecondlaserinonephotonabsorptionwavelength
AT yoshikinaoi inscribingdiffractiongratinginsidesiliconsubstrateusingasubnanosecondlaserinonephotonabsorptionwavelength
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