Dielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region

Abstract We report the values and the spectral dependence of the real and imaginary parts of the dielectric permittivity of semi-insulating Fe-doped InP crystalline wafers in the 2–700 cm−1 (0.06–21 THz) spectral region at room temperature. The data shows a number of absorption bands that are assign...

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Autores principales: L. N. Alyabyeva, E. S. Zhukova, M. A. Belkin, B. P. Gorshunov
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Lenguaje:EN
Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/5808c8599a16402793dbaaa9e8aec91b
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spelling oai:doaj.org-article:5808c8599a16402793dbaaa9e8aec91b2021-12-02T12:30:54ZDielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region10.1038/s41598-017-07164-12045-2322https://doaj.org/article/5808c8599a16402793dbaaa9e8aec91b2017-08-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-07164-1https://doaj.org/toc/2045-2322Abstract We report the values and the spectral dependence of the real and imaginary parts of the dielectric permittivity of semi-insulating Fe-doped InP crystalline wafers in the 2–700 cm−1 (0.06–21 THz) spectral region at room temperature. The data shows a number of absorption bands that are assigned to one- and two-phonon and impurity-related absorption processes. Unlike the previous studies of undoped or low-doped InP material, our data unveil the dielectric properties of InP that are not screened by strong free-carrier absorption and will be useful for designing a wide variety of InP-based electronic and photonic devices operating in the terahertz spectral range.L. N. AlyabyevaE. S. ZhukovaM. A. BelkinB. P. GorshunovNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-7 (2017)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
L. N. Alyabyeva
E. S. Zhukova
M. A. Belkin
B. P. Gorshunov
Dielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region
description Abstract We report the values and the spectral dependence of the real and imaginary parts of the dielectric permittivity of semi-insulating Fe-doped InP crystalline wafers in the 2–700 cm−1 (0.06–21 THz) spectral region at room temperature. The data shows a number of absorption bands that are assigned to one- and two-phonon and impurity-related absorption processes. Unlike the previous studies of undoped or low-doped InP material, our data unveil the dielectric properties of InP that are not screened by strong free-carrier absorption and will be useful for designing a wide variety of InP-based electronic and photonic devices operating in the terahertz spectral range.
format article
author L. N. Alyabyeva
E. S. Zhukova
M. A. Belkin
B. P. Gorshunov
author_facet L. N. Alyabyeva
E. S. Zhukova
M. A. Belkin
B. P. Gorshunov
author_sort L. N. Alyabyeva
title Dielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region
title_short Dielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region
title_full Dielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region
title_fullStr Dielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region
title_full_unstemmed Dielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region
title_sort dielectric properties of semi-insulating fe-doped inp in the terahertz spectral region
publisher Nature Portfolio
publishDate 2017
url https://doaj.org/article/5808c8599a16402793dbaaa9e8aec91b
work_keys_str_mv AT lnalyabyeva dielectricpropertiesofsemiinsulatingfedopedinpintheterahertzspectralregion
AT eszhukova dielectricpropertiesofsemiinsulatingfedopedinpintheterahertzspectralregion
AT mabelkin dielectricpropertiesofsemiinsulatingfedopedinpintheterahertzspectralregion
AT bpgorshunov dielectricpropertiesofsemiinsulatingfedopedinpintheterahertzspectralregion
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