Dielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region
Abstract We report the values and the spectral dependence of the real and imaginary parts of the dielectric permittivity of semi-insulating Fe-doped InP crystalline wafers in the 2–700 cm−1 (0.06–21 THz) spectral region at room temperature. The data shows a number of absorption bands that are assign...
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Nature Portfolio
2017
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oai:doaj.org-article:5808c8599a16402793dbaaa9e8aec91b2021-12-02T12:30:54ZDielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region10.1038/s41598-017-07164-12045-2322https://doaj.org/article/5808c8599a16402793dbaaa9e8aec91b2017-08-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-07164-1https://doaj.org/toc/2045-2322Abstract We report the values and the spectral dependence of the real and imaginary parts of the dielectric permittivity of semi-insulating Fe-doped InP crystalline wafers in the 2–700 cm−1 (0.06–21 THz) spectral region at room temperature. The data shows a number of absorption bands that are assigned to one- and two-phonon and impurity-related absorption processes. Unlike the previous studies of undoped or low-doped InP material, our data unveil the dielectric properties of InP that are not screened by strong free-carrier absorption and will be useful for designing a wide variety of InP-based electronic and photonic devices operating in the terahertz spectral range.L. N. AlyabyevaE. S. ZhukovaM. A. BelkinB. P. GorshunovNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-7 (2017) |
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Medicine R Science Q L. N. Alyabyeva E. S. Zhukova M. A. Belkin B. P. Gorshunov Dielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region |
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Abstract We report the values and the spectral dependence of the real and imaginary parts of the dielectric permittivity of semi-insulating Fe-doped InP crystalline wafers in the 2–700 cm−1 (0.06–21 THz) spectral region at room temperature. The data shows a number of absorption bands that are assigned to one- and two-phonon and impurity-related absorption processes. Unlike the previous studies of undoped or low-doped InP material, our data unveil the dielectric properties of InP that are not screened by strong free-carrier absorption and will be useful for designing a wide variety of InP-based electronic and photonic devices operating in the terahertz spectral range. |
format |
article |
author |
L. N. Alyabyeva E. S. Zhukova M. A. Belkin B. P. Gorshunov |
author_facet |
L. N. Alyabyeva E. S. Zhukova M. A. Belkin B. P. Gorshunov |
author_sort |
L. N. Alyabyeva |
title |
Dielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region |
title_short |
Dielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region |
title_full |
Dielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region |
title_fullStr |
Dielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region |
title_full_unstemmed |
Dielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region |
title_sort |
dielectric properties of semi-insulating fe-doped inp in the terahertz spectral region |
publisher |
Nature Portfolio |
publishDate |
2017 |
url |
https://doaj.org/article/5808c8599a16402793dbaaa9e8aec91b |
work_keys_str_mv |
AT lnalyabyeva dielectricpropertiesofsemiinsulatingfedopedinpintheterahertzspectralregion AT eszhukova dielectricpropertiesofsemiinsulatingfedopedinpintheterahertzspectralregion AT mabelkin dielectricpropertiesofsemiinsulatingfedopedinpintheterahertzspectralregion AT bpgorshunov dielectricpropertiesofsemiinsulatingfedopedinpintheterahertzspectralregion |
_version_ |
1718394279638859776 |