A Novel Nitrogen Ion Implantation Technique for Turning Thin Film “Normally On” AlGaN/GaN Transistor into “Normally Off” Using TCAD Simulation

This study presents an innovative, low-cost, mass-manufacturable ion implantation technique for converting thin film normally on AlGaN/GaN devices into normally off ones. Through TCAD (Technology Computer-Aided Design) simulations, we converted a calibrated normally on transistor into a normally off...

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Autores principales:	Gene Sheu, Yu-Lin Song, Dupati Susmitha, Kutagulla Issac, Ramyasri Mogarala
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	TCAD normally off Nitrogen ion implantation positive temperature coefficient Chemical technology TP1-1185 Chemical engineering TP155-156
Acceso en línea:	https://doaj.org/article/58a70c0027c24d20b9ab39b87f25ec2b
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spelling	oai:doaj.org-article:58a70c0027c24d20b9ab39b87f25ec2b2021-11-25T18:20:13ZA Novel Nitrogen Ion Implantation Technique for Turning Thin Film “Normally On” AlGaN/GaN Transistor into “Normally Off” Using TCAD Simulation10.3390/membranes111108992077-0375https://doaj.org/article/58a70c0027c24d20b9ab39b87f25ec2b2021-11-01T00:00:00Zhttps://www.mdpi.com/2077-0375/11/11/899https://doaj.org/toc/2077-0375This study presents an innovative, low-cost, mass-manufacturable ion implantation technique for converting thin film normally on AlGaN/GaN devices into normally off ones. Through TCAD (Technology Computer-Aided Design) simulations, we converted a calibrated normally on transistor into a normally off AlGaN/GaN transistor grown on a silicon <111> substrate using a nitrogen ion implantation energy of 300 keV, which shifted the bandgap from below to above the Fermi level. In addition, the threshold voltage (V<sub>th</sub>) was adjusted by altering the nitrogen ion implantation dose. The normally off AlGaN/GaN device exhibited a breakdown voltage of 127.4 V at room temperature because of impact ionization, which showed a positive temperature coefficient of 3 × 10<sup>−3</sup> K<sup>−1</sup>. In this study, the normally off AlGaN/GaN device exhibited an average drain current gain of 45.3%, which was confirmed through an analysis of transfer characteristics by changing the gate-to-source ramping. Accordingly, the proposed technique enabled the successful simulation of a 100-µm-wide device that can generate a saturation drain current of 1.4 A/mm at a gate-to-source voltage of 4 V, with a mobility of 1487 cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup>. The advantages of the proposed technique are summarized herein in terms of processing and performance.Gene SheuYu-Lin SongDupati SusmithaKutagulla IssacRamyasri MogaralaMDPI AGarticleTCADnormally offNitrogen ion implantationpositive temperature coefficientChemical technologyTP1-1185Chemical engineeringTP155-156ENMembranes, Vol 11, Iss 899, p 899 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	TCAD normally off Nitrogen ion implantation positive temperature coefficient Chemical technology TP1-1185 Chemical engineering TP155-156
spellingShingle	TCAD normally off Nitrogen ion implantation positive temperature coefficient Chemical technology TP1-1185 Chemical engineering TP155-156 Gene Sheu Yu-Lin Song Dupati Susmitha Kutagulla Issac Ramyasri Mogarala A Novel Nitrogen Ion Implantation Technique for Turning Thin Film “Normally On” AlGaN/GaN Transistor into “Normally Off” Using TCAD Simulation
description	This study presents an innovative, low-cost, mass-manufacturable ion implantation technique for converting thin film normally on AlGaN/GaN devices into normally off ones. Through TCAD (Technology Computer-Aided Design) simulations, we converted a calibrated normally on transistor into a normally off AlGaN/GaN transistor grown on a silicon <111> substrate using a nitrogen ion implantation energy of 300 keV, which shifted the bandgap from below to above the Fermi level. In addition, the threshold voltage (V<sub>th</sub>) was adjusted by altering the nitrogen ion implantation dose. The normally off AlGaN/GaN device exhibited a breakdown voltage of 127.4 V at room temperature because of impact ionization, which showed a positive temperature coefficient of 3 × 10<sup>−3</sup> K<sup>−1</sup>. In this study, the normally off AlGaN/GaN device exhibited an average drain current gain of 45.3%, which was confirmed through an analysis of transfer characteristics by changing the gate-to-source ramping. Accordingly, the proposed technique enabled the successful simulation of a 100-µm-wide device that can generate a saturation drain current of 1.4 A/mm at a gate-to-source voltage of 4 V, with a mobility of 1487 cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup>. The advantages of the proposed technique are summarized herein in terms of processing and performance.
format	article
author	Gene Sheu Yu-Lin Song Dupati Susmitha Kutagulla Issac Ramyasri Mogarala
author_facet	Gene Sheu Yu-Lin Song Dupati Susmitha Kutagulla Issac Ramyasri Mogarala
author_sort	Gene Sheu
title	A Novel Nitrogen Ion Implantation Technique for Turning Thin Film “Normally On” AlGaN/GaN Transistor into “Normally Off” Using TCAD Simulation
title_short	A Novel Nitrogen Ion Implantation Technique for Turning Thin Film “Normally On” AlGaN/GaN Transistor into “Normally Off” Using TCAD Simulation
title_full	A Novel Nitrogen Ion Implantation Technique for Turning Thin Film “Normally On” AlGaN/GaN Transistor into “Normally Off” Using TCAD Simulation
title_fullStr	A Novel Nitrogen Ion Implantation Technique for Turning Thin Film “Normally On” AlGaN/GaN Transistor into “Normally Off” Using TCAD Simulation
title_full_unstemmed	A Novel Nitrogen Ion Implantation Technique for Turning Thin Film “Normally On” AlGaN/GaN Transistor into “Normally Off” Using TCAD Simulation
title_sort	novel nitrogen ion implantation technique for turning thin film “normally on” algan/gan transistor into “normally off” using tcad simulation
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/58a70c0027c24d20b9ab39b87f25ec2b
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A Novel Nitrogen Ion Implantation Technique for Turning Thin Film “Normally On” AlGaN/GaN Transistor into “Normally Off” Using TCAD Simulation

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