M-Center in Neutron-Irradiated 4H-SiC

We report on the metastable defects introduced in the n-type 4H-SiC material by epithermal and fast neutron irradiation. The epithermal and fast neutron irradiation defects in 4H-SiC are much less explored compared to electron or proton irradiation-induced defects. In addition to the carbon vacancy...

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Autores principales:	Ivana Capan, Tomislav Brodar, Takahiro Makino, Vladimir Radulovic, Luka Snoj
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	defects 4H-SiC DLTS neutrons Crystallography QD901-999
Acceso en línea:	https://doaj.org/article/58c3fc5d3b4f461f99a536a07e3b2f74
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spelling	oai:doaj.org-article:58c3fc5d3b4f461f99a536a07e3b2f742021-11-25T17:19:27ZM-Center in Neutron-Irradiated 4H-SiC10.3390/cryst111114042073-4352https://doaj.org/article/58c3fc5d3b4f461f99a536a07e3b2f742021-11-01T00:00:00Zhttps://www.mdpi.com/2073-4352/11/11/1404https://doaj.org/toc/2073-4352We report on the metastable defects introduced in the n-type 4H-SiC material by epithermal and fast neutron irradiation. The epithermal and fast neutron irradiation defects in 4H-SiC are much less explored compared to electron or proton irradiation-induced defects. In addition to the carbon vacancy (Vc), silicon vacancy (Vsi) and carbon antisite-carbon vacancy (CAV) complex, the neutron irradiation has introduced four deep-level defects, all arising from the metastable defect, the M-center. The metastable deep-level defects were investigated by deep level transient spectroscopy (DLTS), high-resolution Laplace DLTS (L-DLTS) and isothermal DLTS. The existence of the fourth deep-level defect, M<sub>4</sub>, recently observed in ion-implanted 4H-SiC, has been additionally confirmed in neutron-irradiated samples. The isothermal DLTS technique has been proven as a useful tool for studying the metastable defects.Ivana CapanTomislav BrodarTakahiro MakinoVladimir RadulovicLuka SnojMDPI AGarticledefects4H-SiCDLTSneutronsCrystallographyQD901-999ENCrystals, Vol 11, Iss 1404, p 1404 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	defects 4H-SiC DLTS neutrons Crystallography QD901-999
spellingShingle	defects 4H-SiC DLTS neutrons Crystallography QD901-999 Ivana Capan Tomislav Brodar Takahiro Makino Vladimir Radulovic Luka Snoj M-Center in Neutron-Irradiated 4H-SiC
description	We report on the metastable defects introduced in the n-type 4H-SiC material by epithermal and fast neutron irradiation. The epithermal and fast neutron irradiation defects in 4H-SiC are much less explored compared to electron or proton irradiation-induced defects. In addition to the carbon vacancy (Vc), silicon vacancy (Vsi) and carbon antisite-carbon vacancy (CAV) complex, the neutron irradiation has introduced four deep-level defects, all arising from the metastable defect, the M-center. The metastable deep-level defects were investigated by deep level transient spectroscopy (DLTS), high-resolution Laplace DLTS (L-DLTS) and isothermal DLTS. The existence of the fourth deep-level defect, M<sub>4</sub>, recently observed in ion-implanted 4H-SiC, has been additionally confirmed in neutron-irradiated samples. The isothermal DLTS technique has been proven as a useful tool for studying the metastable defects.
format	article
author	Ivana Capan Tomislav Brodar Takahiro Makino Vladimir Radulovic Luka Snoj
author_facet	Ivana Capan Tomislav Brodar Takahiro Makino Vladimir Radulovic Luka Snoj
author_sort	Ivana Capan
title	M-Center in Neutron-Irradiated 4H-SiC
title_short	M-Center in Neutron-Irradiated 4H-SiC
title_full	M-Center in Neutron-Irradiated 4H-SiC
title_fullStr	M-Center in Neutron-Irradiated 4H-SiC
title_full_unstemmed	M-Center in Neutron-Irradiated 4H-SiC
title_sort	m-center in neutron-irradiated 4h-sic
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/58c3fc5d3b4f461f99a536a07e3b2f74
work_keys_str_mv	AT ivanacapan mcenterinneutronirradiated4hsic AT tomislavbrodar mcenterinneutronirradiated4hsic AT takahiromakino mcenterinneutronirradiated4hsic AT vladimirradulovic mcenterinneutronirradiated4hsic AT lukasnoj mcenterinneutronirradiated4hsic
_version_	1718412472203870208

M-Center in Neutron-Irradiated 4H-SiC

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