Spin transport in polarization induced two-dimensional electron gas channel in c-GaN nano-wedges

Abstract A two-dimensional electron gas (2DEG), which has recently been shown to develop in the central vertical plane of a wedge-shaped c-oriented GaN nanowall due to spontaneous polarization effect, offers a unique scenario, where the symmetry between the conduction and valence band is preserved o...

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Autores principales:	Swarup Deb, Subhabrata Dhar
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/590719b6bfd042c199a353e33ddc11d2
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spelling	oai:doaj.org-article:590719b6bfd042c199a353e33ddc11d22021-12-02T13:20:04ZSpin transport in polarization induced two-dimensional electron gas channel in c-GaN nano-wedges10.1038/s41598-021-84451-y2045-2322https://doaj.org/article/590719b6bfd042c199a353e33ddc11d22021-03-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-84451-yhttps://doaj.org/toc/2045-2322Abstract A two-dimensional electron gas (2DEG), which has recently been shown to develop in the central vertical plane of a wedge-shaped c-oriented GaN nanowall due to spontaneous polarization effect, offers a unique scenario, where the symmetry between the conduction and valence band is preserved over the entire confining potential. This results in the suppression of Rashba coupling even when the shape of the wedge is not symmetric. Here, for such a 2DEG channel, relaxation time for different spin projections is calculated as a function of donor concentration and gate bias. Our study reveals a strong dependence of the relaxation rate on the spin-orientation and density of carriers in the channel. Most interestingly, relaxation of spin oriented along the direction of confinement has been found to be completely switched off. Upon applying a suitable bias at the gate, the process can be switched on again. Exploiting this fascinating effect, an electrically driven spin-transistor has been proposed.Swarup DebSubhabrata DharNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-7 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Swarup Deb Subhabrata Dhar Spin transport in polarization induced two-dimensional electron gas channel in c-GaN nano-wedges
description	Abstract A two-dimensional electron gas (2DEG), which has recently been shown to develop in the central vertical plane of a wedge-shaped c-oriented GaN nanowall due to spontaneous polarization effect, offers a unique scenario, where the symmetry between the conduction and valence band is preserved over the entire confining potential. This results in the suppression of Rashba coupling even when the shape of the wedge is not symmetric. Here, for such a 2DEG channel, relaxation time for different spin projections is calculated as a function of donor concentration and gate bias. Our study reveals a strong dependence of the relaxation rate on the spin-orientation and density of carriers in the channel. Most interestingly, relaxation of spin oriented along the direction of confinement has been found to be completely switched off. Upon applying a suitable bias at the gate, the process can be switched on again. Exploiting this fascinating effect, an electrically driven spin-transistor has been proposed.
format	article
author	Swarup Deb Subhabrata Dhar
author_facet	Swarup Deb Subhabrata Dhar
author_sort	Swarup Deb
title	Spin transport in polarization induced two-dimensional electron gas channel in c-GaN nano-wedges
title_short	Spin transport in polarization induced two-dimensional electron gas channel in c-GaN nano-wedges
title_full	Spin transport in polarization induced two-dimensional electron gas channel in c-GaN nano-wedges
title_fullStr	Spin transport in polarization induced two-dimensional electron gas channel in c-GaN nano-wedges
title_full_unstemmed	Spin transport in polarization induced two-dimensional electron gas channel in c-GaN nano-wedges
title_sort	spin transport in polarization induced two-dimensional electron gas channel in c-gan nano-wedges
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/590719b6bfd042c199a353e33ddc11d2
work_keys_str_mv	AT swarupdeb spintransportinpolarizationinducedtwodimensionalelectrongaschannelincgannanowedges AT subhabratadhar spintransportinpolarizationinducedtwodimensionalelectrongaschannelincgannanowedges
_version_	1718393212535570432

Spin transport in polarization induced two-dimensional electron gas channel in c-GaN nano-wedges

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