Strain induced band inversion and topological phase transition in methyl-decorated stanene film

Abstract The researches for new quantum spin Hall (QSH) insulators with large bulk energy gap are of much significance for their practical applications at room temperature in electronic devices with low-energy consumption. By means of first-principles calculations, we proposed that methyl-decorated...

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Autores principales:	Dongchao Wang, Li Chen, Hongmei Liu, Changmin Shi, Xiaoli Wang, Guangliang Cui, Pinhua Zhang, Yeqing Chen
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/5942604bda0049f79fec36e1eebeb591
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spelling	oai:doaj.org-article:5942604bda0049f79fec36e1eebeb5912021-12-02T15:05:34ZStrain induced band inversion and topological phase transition in methyl-decorated stanene film10.1038/s41598-017-17336-82045-2322https://doaj.org/article/5942604bda0049f79fec36e1eebeb5912017-12-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-17336-8https://doaj.org/toc/2045-2322Abstract The researches for new quantum spin Hall (QSH) insulators with large bulk energy gap are of much significance for their practical applications at room temperature in electronic devices with low-energy consumption. By means of first-principles calculations, we proposed that methyl-decorated stanene (SnCH3) film can be tuned into QSH insulator under critical tensile strain of 6%. The nonzero topological invariant and helical edge states further confirm the nontrivial nature in stretched SnCH3 film. The topological phase transition originates from the s-p xy type band inversion at the Γ point with the strain increased. The spin-orbital coupling (SOC) induces a large band gap of ~0.24 eV, indicating that SnCH3 film under strain is a quite promising material to achieve QSH effect. The proper substrate, h-BN, finally is presented to support the SnCH3 film with nontrivial topology preserved.Dongchao WangLi ChenHongmei LiuChangmin ShiXiaoli WangGuangliang CuiPinhua ZhangYeqing ChenNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Dongchao Wang Li Chen Hongmei Liu Changmin Shi Xiaoli Wang Guangliang Cui Pinhua Zhang Yeqing Chen Strain induced band inversion and topological phase transition in methyl-decorated stanene film
description	Abstract The researches for new quantum spin Hall (QSH) insulators with large bulk energy gap are of much significance for their practical applications at room temperature in electronic devices with low-energy consumption. By means of first-principles calculations, we proposed that methyl-decorated stanene (SnCH3) film can be tuned into QSH insulator under critical tensile strain of 6%. The nonzero topological invariant and helical edge states further confirm the nontrivial nature in stretched SnCH3 film. The topological phase transition originates from the s-p xy type band inversion at the Γ point with the strain increased. The spin-orbital coupling (SOC) induces a large band gap of ~0.24 eV, indicating that SnCH3 film under strain is a quite promising material to achieve QSH effect. The proper substrate, h-BN, finally is presented to support the SnCH3 film with nontrivial topology preserved.
format	article
author	Dongchao Wang Li Chen Hongmei Liu Changmin Shi Xiaoli Wang Guangliang Cui Pinhua Zhang Yeqing Chen
author_facet	Dongchao Wang Li Chen Hongmei Liu Changmin Shi Xiaoli Wang Guangliang Cui Pinhua Zhang Yeqing Chen
author_sort	Dongchao Wang
title	Strain induced band inversion and topological phase transition in methyl-decorated stanene film
title_short	Strain induced band inversion and topological phase transition in methyl-decorated stanene film
title_full	Strain induced band inversion and topological phase transition in methyl-decorated stanene film
title_fullStr	Strain induced band inversion and topological phase transition in methyl-decorated stanene film
title_full_unstemmed	Strain induced band inversion and topological phase transition in methyl-decorated stanene film
title_sort	strain induced band inversion and topological phase transition in methyl-decorated stanene film
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/5942604bda0049f79fec36e1eebeb591
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Strain induced band inversion and topological phase transition in methyl-decorated stanene film

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