Electrostatic quantum dots in silicene

Abstract We study electrostatic quantum dot confinement for charge carriers in silicene. The confinement is formed by vertical electric field surrounding the quantum dot area. The resulting energy gap in the outside of the quantum dot traps the carriers within, and the difference of electrostatic po...

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Autores principales:	B. Szafran, D. Żebrowski, Alina Mreńca-Kolasińska
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/59799bc9d1934eb494ea5c0e4b5cf987
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spelling	oai:doaj.org-article:59799bc9d1934eb494ea5c0e4b5cf9872021-12-02T11:41:14ZElectrostatic quantum dots in silicene10.1038/s41598-018-25534-12045-2322https://doaj.org/article/59799bc9d1934eb494ea5c0e4b5cf9872018-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-25534-1https://doaj.org/toc/2045-2322Abstract We study electrostatic quantum dot confinement for charge carriers in silicene. The confinement is formed by vertical electric field surrounding the quantum dot area. The resulting energy gap in the outside of the quantum dot traps the carriers within, and the difference of electrostatic potentials on the buckled silicene sublattices produces nonzero carrier masses outside the quantum dot. We study the electrostatic confinement defined inside a silicene flake with both the atomistic tight-binding approach as well as with the continuum approximation for a circularly symmetric electrostatic potential. We find localization of the states within the quantum dot and their decoupling from the edge that makes the spectrum of the localized states independent of the crystal termination. For an armchair edge of the flake removal of the intervalley scattering by the electrostatic confinement is found.B. SzafranD. ŻebrowskiAlina Mreńca-KolasińskaNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-9 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q B. Szafran D. Żebrowski Alina Mreńca-Kolasińska Electrostatic quantum dots in silicene
description	Abstract We study electrostatic quantum dot confinement for charge carriers in silicene. The confinement is formed by vertical electric field surrounding the quantum dot area. The resulting energy gap in the outside of the quantum dot traps the carriers within, and the difference of electrostatic potentials on the buckled silicene sublattices produces nonzero carrier masses outside the quantum dot. We study the electrostatic confinement defined inside a silicene flake with both the atomistic tight-binding approach as well as with the continuum approximation for a circularly symmetric electrostatic potential. We find localization of the states within the quantum dot and their decoupling from the edge that makes the spectrum of the localized states independent of the crystal termination. For an armchair edge of the flake removal of the intervalley scattering by the electrostatic confinement is found.
format	article
author	B. Szafran D. Żebrowski Alina Mreńca-Kolasińska
author_facet	B. Szafran D. Żebrowski Alina Mreńca-Kolasińska
author_sort	B. Szafran
title	Electrostatic quantum dots in silicene
title_short	Electrostatic quantum dots in silicene
title_full	Electrostatic quantum dots in silicene
title_fullStr	Electrostatic quantum dots in silicene
title_full_unstemmed	Electrostatic quantum dots in silicene
title_sort	electrostatic quantum dots in silicene
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/59799bc9d1934eb494ea5c0e4b5cf987
work_keys_str_mv	AT bszafran electrostaticquantumdotsinsilicene AT dzebrowski electrostaticquantumdotsinsilicene AT alinamrencakolasinska electrostaticquantumdotsinsilicene
_version_	1718395399799046144

Electrostatic quantum dots in silicene

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