Electrostatic quantum dots in silicene
Abstract We study electrostatic quantum dot confinement for charge carriers in silicene. The confinement is formed by vertical electric field surrounding the quantum dot area. The resulting energy gap in the outside of the quantum dot traps the carriers within, and the difference of electrostatic po...
Guardado en:
Autores principales: | B. Szafran, D. Żebrowski, Alina Mreńca-Kolasińska |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2018
|
Materias: | |
Acceso en línea: | https://doaj.org/article/59799bc9d1934eb494ea5c0e4b5cf987 |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Effective Landé factors for an electrostatically defined quantum point contact in silicene
por: Bartłomiej Rzeszotarski, et al.
Publicado: (2021) -
Dumbbell configuration of silicon adatom defects on silicene nanoribbons
por: Huynh Anh Huy, et al.
Publicado: (2021) -
Effective Hamiltonian for silicene under arbitrary strain from multi-orbital basis
por: Zhuo Bin Siu, et al.
Publicado: (2021) -
Emerging two-dimensional ferromagnetism in silicene materials
por: Andrey M. Tokmachev, et al.
Publicado: (2018) -
Monolayer-to-bilayer transformation of silicenes and their structural analysis
por: Ritsuko Yaokawa, et al.
Publicado: (2016)