Spectral tuning of diamond photonic crystal slabs by deposition of a thin layer with silicon vacancy centers

The controlled extraction of light from diamond optical color centers is essential for their practical prospective applications as single photon sources in quantum communications and as biomedical sensors in biosensing. Photonic crystal (PhC) structures can be employed to enhance the collection effi...

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Autores principales: Fait Jan, Varga Marián, Hruška Karel, Kromka Alexander, Rezek Bohuslav, Ondič Lukáš
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Lenguaje:EN
Publicado: De Gruyter 2021
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spelling oai:doaj.org-article:59efa6d2b91241809dffbee66265faca2021-12-05T14:10:56ZSpectral tuning of diamond photonic crystal slabs by deposition of a thin layer with silicon vacancy centers2192-861410.1515/nanoph-2021-0369https://doaj.org/article/59efa6d2b91241809dffbee66265faca2021-09-01T00:00:00Zhttps://doi.org/10.1515/nanoph-2021-0369https://doaj.org/toc/2192-8614The controlled extraction of light from diamond optical color centers is essential for their practical prospective applications as single photon sources in quantum communications and as biomedical sensors in biosensing. Photonic crystal (PhC) structures can be employed to enhance the collection efficiency from these centers by directing the extracted light towards the detector. However, PhCs must be fabricated with nanoscale precision, which is extremely challenging to achieve for current materials and nanostructuring technologies. Imperfections inherently lead to spectral mismatch of the extraction (leaky) modes with color center emission lines. Here, we demonstrate a new and simple two-step method for fabricating diamond PhC slabs with leaky modes overlapping the emission line of the silicon vacancy (SiV) centers. In the first step, the PhC structure with leaky modes blue shifted from the SiV emission line is fabricated in a nanocrystalline diamond without SiV centers. A thin layer of SiV-rich diamond is then deposited over the PhC slab so that the spectral position of the PhC leaky modes is adjusted to the emission line of the SiV centers, thereby avoiding the need for nanoscale precision of the structuring method. An intensity enhancement of the zero-phonon line of the SiV centers by a factor of nine is achieved. The color centers in the thin surface layer are beneficial for sensing applications and their properties can also be further controlled by the diamond surface chemistry. The demonstrated PhC tuning method can also be easily adapted to other optical centers and photonic structures of different types in diamond and other materials.Fait JanVarga MariánHruška KarelKromka AlexanderRezek BohuslavOndič LukášDe Gruyterarticleleaky modesnanocrystalline diamondphotonic crystal slabsilicon vacancyspectral tuningPhysicsQC1-999ENNanophotonics, Vol 10, Iss 15, Pp 3895-3905 (2021)
institution DOAJ
collection DOAJ
language EN
topic leaky modes
nanocrystalline diamond
photonic crystal slab
silicon vacancy
spectral tuning
Physics
QC1-999
spellingShingle leaky modes
nanocrystalline diamond
photonic crystal slab
silicon vacancy
spectral tuning
Physics
QC1-999
Fait Jan
Varga Marián
Hruška Karel
Kromka Alexander
Rezek Bohuslav
Ondič Lukáš
Spectral tuning of diamond photonic crystal slabs by deposition of a thin layer with silicon vacancy centers
description The controlled extraction of light from diamond optical color centers is essential for their practical prospective applications as single photon sources in quantum communications and as biomedical sensors in biosensing. Photonic crystal (PhC) structures can be employed to enhance the collection efficiency from these centers by directing the extracted light towards the detector. However, PhCs must be fabricated with nanoscale precision, which is extremely challenging to achieve for current materials and nanostructuring technologies. Imperfections inherently lead to spectral mismatch of the extraction (leaky) modes with color center emission lines. Here, we demonstrate a new and simple two-step method for fabricating diamond PhC slabs with leaky modes overlapping the emission line of the silicon vacancy (SiV) centers. In the first step, the PhC structure with leaky modes blue shifted from the SiV emission line is fabricated in a nanocrystalline diamond without SiV centers. A thin layer of SiV-rich diamond is then deposited over the PhC slab so that the spectral position of the PhC leaky modes is adjusted to the emission line of the SiV centers, thereby avoiding the need for nanoscale precision of the structuring method. An intensity enhancement of the zero-phonon line of the SiV centers by a factor of nine is achieved. The color centers in the thin surface layer are beneficial for sensing applications and their properties can also be further controlled by the diamond surface chemistry. The demonstrated PhC tuning method can also be easily adapted to other optical centers and photonic structures of different types in diamond and other materials.
format article
author Fait Jan
Varga Marián
Hruška Karel
Kromka Alexander
Rezek Bohuslav
Ondič Lukáš
author_facet Fait Jan
Varga Marián
Hruška Karel
Kromka Alexander
Rezek Bohuslav
Ondič Lukáš
author_sort Fait Jan
title Spectral tuning of diamond photonic crystal slabs by deposition of a thin layer with silicon vacancy centers
title_short Spectral tuning of diamond photonic crystal slabs by deposition of a thin layer with silicon vacancy centers
title_full Spectral tuning of diamond photonic crystal slabs by deposition of a thin layer with silicon vacancy centers
title_fullStr Spectral tuning of diamond photonic crystal slabs by deposition of a thin layer with silicon vacancy centers
title_full_unstemmed Spectral tuning of diamond photonic crystal slabs by deposition of a thin layer with silicon vacancy centers
title_sort spectral tuning of diamond photonic crystal slabs by deposition of a thin layer with silicon vacancy centers
publisher De Gruyter
publishDate 2021
url https://doaj.org/article/59efa6d2b91241809dffbee66265faca
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